Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10483759 | Integrated multi-mode large-scale electric power support system for an electrical grid | Oleg S. Fishman, Zekeriya Dereli, Hanan Fishman | 2019-11-19 |
| 9627889 | High voltage energy harvesting and conversion renewable energy utility size electric power systems and visual monitoring and control systems | Oleg S. Fishman | 2017-04-18 |
| 9350166 | High voltage energy harvesting and conversion renewable energy utility size electric power systems and visual monitoring and control systems for said systems | Oleg S. Fishman | 2016-05-24 |
| 9118215 | High voltage energy harvesting and conversion renewable energy utility size electric power systems and visual monitoring and control systems for said systems | Oleg S. Fishman | 2015-08-25 |
| 5579235 | Method of monitoring rpm sensors | Andreas Schlichenmaier, Klaus-Dieter Haefele, Christian Dittmar, Martin Blanc, Thomas Purat | 1996-11-26 |
| 5299131 | Method of correcting the rotating speed of vehicle wheels sensed by wheel sensors | Hardy Haas, Manfred Meissner, Alfred Sigl, Andreas Schlichenmaier, Hans Guttler +5 more | 1994-03-29 |
| 4912543 | Integrated semiconductor circuit having an external contacting track level consisting of aluminum or of an aluminum alloy | Franz Neppl | 1990-03-27 |
| 4874717 | Semiconductor circuit containing integrated bipolar and MOS transistors on a chip and method of producing same | Franz Neppl | 1989-10-17 |
| 4740479 | Method for the manufacture of cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memories | Franz Neppl, Konrad Hieber | 1988-04-26 |
| 4640844 | Method for the manufacture of gate electrodes formed of double layers of metal silicides having a high melting point and doped polycrystalline silicon | Franz Neppl, Konrad Hieber | 1987-02-03 |
| 4603472 | Method of making MOS FETs using silicate glass layer as gate edge masking for ion implantation | Erwin Jacobs, Franz Neppl | 1986-08-05 |
| 4562638 | Method for the simultaneous manufacture of fast short channel and voltage-stable MOS transistors in VLSI circuits | Christoph Werner | 1986-01-07 |
| 4525920 | Method of making CMOS circuits by twin tub process and multiple implantations | Erwin Jacobs | 1985-07-02 |
| 4525378 | Method for manufacturing VLSI complementary MOS field effect circuits | Erwin Jacobs, Franz Neppl | 1985-06-25 |
| 4510670 | Method for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductors | Franz Neppl, Konrad Hieber | 1985-04-16 |
| 4505027 | Method of making MOS device using metal silicides or polysilicon for gates and impurity source for active regions | Franz Neppl, Ulf Burker, Werner Christoph | 1985-03-19 |
| 4462149 | Method for producing integrated MOS field effect transistors with an additional track level of metal silicides | — | 1984-07-31 |
| 4459740 | Method for manufacturing VLSI complementary MOS field effect transistor circuits in silicon gate technology | Erwin Jacobs, Adolf Scheibe | 1984-07-17 |
| 4459741 | Method for producing VLSI complementary MOS field effect transistor circuits | Erwin Jacobs | 1984-07-17 |
| 4434543 | Process for producing adjacent tubs implanted with dopant ions in the manufacture of LSI complementary MOS field effect transistors | Erwin Jacobs | 1984-03-06 |
| 4342149 | Method of making very short channel length MNOS and MOS devices by double implantation of one conductivity type subsequent to other type implantation | Erwin Jacobs, Dezso Takacs | 1982-08-03 |
| 4330850 | MNOS Memory cell | Erwin Jacobs, Dezsoe Takacs | 1982-05-18 |
| 4323913 | Integrated semiconductor circuit arrangement | Helmuth Murrmann, Ronald Rathbone | 1982-04-06 |
| 4306353 | Process for production of integrated MOS circuits with and without MNOS memory transistors in silicon-gate technology | Erwin Jacobs | 1981-12-22 |
| 4257832 | Process for producing an integrated multi-layer insulator memory cell | Erwin Jacobs | 1981-03-24 |