Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4761384 | Forming retrograde twin wells by outdiffusion of impurity ions in epitaxial layer followed by CMOS device processing | Franz Neppl, Josef Winnerl, Carlos-Alberto Mazure-Espejo | 1988-08-02 |
| 4717686 | Method for the simultaneous manufacture of bipolar and complementary MOS transistors on a common silicon substrate | Josef Winnerl | 1988-01-05 |
| 4603472 | Method of making MOS FETs using silicate glass layer as gate edge masking for ion implantation | Ulrich Schwabe, Franz Neppl | 1986-08-05 |
| 4525920 | Method of making CMOS circuits by twin tub process and multiple implantations | Ulrich Schwabe | 1985-07-02 |
| 4525378 | Method for manufacturing VLSI complementary MOS field effect circuits | Ulrich Schwabe, Franz Neppl | 1985-06-25 |
| 4511996 | Memory cell having a double gate field effect transistor and a method for its operation | — | 1985-04-16 |
| 4459740 | Method for manufacturing VLSI complementary MOS field effect transistor circuits in silicon gate technology | Ulrich Schwabe, Adolf Scheibe | 1984-07-17 |
| 4459741 | Method for producing VLSI complementary MOS field effect transistor circuits | Ulrich Schwabe | 1984-07-17 |
| 4434543 | Process for producing adjacent tubs implanted with dopant ions in the manufacture of LSI complementary MOS field effect transistors | Ulrich Schwabe | 1984-03-06 |
| 4342149 | Method of making very short channel length MNOS and MOS devices by double implantation of one conductivity type subsequent to other type implantation | Ulrich Schwabe, Dezso Takacs | 1982-08-03 |
| 4330850 | MNOS Memory cell | Ulrich Schwabe, Dezsoe Takacs | 1982-05-18 |
| 4306353 | Process for production of integrated MOS circuits with and without MNOS memory transistors in silicon-gate technology | Ulrich Schwabe | 1981-12-22 |
| 4257832 | Process for producing an integrated multi-layer insulator memory cell | Ulrich Schwabe | 1981-03-24 |