Issued Patents All Time
Showing 26–36 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7781322 | Nickel alloy salicide transistor structure and method for manufacturing same | Ja-Hum Ku, Kwan-Jong Roh, Min-Joo Kim | 2010-08-24 |
| 7772866 | Structure and method of mapping signal intensity to surface voltage for integrated circuit inspection | Oliver D. Patterson, Horatio S. Wildman | 2010-08-10 |
| 7679083 | Semiconductor integrated test structures for electron beam inspection of semiconductor wafers | Scott Jansen, Randy W. Mann, Oliver D. Patterson | 2010-03-16 |
| 7501651 | Test structure of semiconductor device | Ja-Hum Ku, Brian J. Greene, Manfred Eller, Roman Knoefler, Zhijiong Luo | 2009-03-10 |
| 7465617 | Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer | Ja-Hum Ku, Chang-Won Lee, Seong-Jun Heo, Sun-Pil Youn | 2008-12-16 |
| 7317204 | Test structure of semiconductor device | Ja-Hum Ku, Brian J. Greene, Manfred Eller, Wee Lang Tan, Sunfei Fang +1 more | 2008-01-08 |
| 7307320 | Differential mechanical stress-producing regions for integrated circuit field effect transistors | Young Way Teh | 2007-12-11 |
| 7232756 | Nickel salicide process with reduced dopant deactivation | Ja-Hum Ku, Kwan-Jong Roh, Min-Joo Kim, Sug-Woo Jung, Sun-Pil Youn | 2007-06-19 |
| 7084061 | Methods of fabricating a semiconductor device having MOS transistor with strained channel | Ja-Hum Ku, Sug-Woo Jung, Sun-Pil Youn, Min-Joo Kim, Kwan-Jong Roh | 2006-08-01 |
| 7005367 | Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer | Ja-Hum Ku, Chang-Won Lee, Seong-Jun Heo, Sun-Pil Youn | 2006-02-28 |
| 6797559 | Method of fabricating semiconductor device having metal conducting layer | Chang-Won Lee, Si-Young Choi, Seong-Jun Heo, Sung-Man Kim, Ja-Hum Ku +1 more | 2004-09-28 |