Issued Patents All Time
Showing 25 most recent of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12363983 | Layout techniques and optimization for power transistors | Shamit Som, Jason Barrett, Nishant R. Yamujala, John Stephen Atherton | 2025-07-15 |
| 12323113 | Circuit and method of shutdown for bias network in high voltage amplifier | — | 2025-06-03 |
| 12266523 | Parasitic capacitance reduction in GaN-on-silicon devices | Gabriel R. Cueva, Timothy E. Boles | 2025-04-01 |
| 12261207 | Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices | Allen W. Hanson, Chuanxin Lian | 2025-03-25 |
| 12112983 | Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device | Timothy E. Boles, Gabriel R. Cueva | 2024-10-08 |
| 12113484 | High voltage stacked transistor amplifier | Shamit Som, Kohei Fujii, Walter H. Nagy | 2024-10-08 |
| 11990343 | Gate metal formation on gallium nitride or aluminum gallium nitride | Timothy E. Boles, Jason Barrett, John Stephen Atherton | 2024-05-21 |
| 11961888 | Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices | Allen W. Hanson, Chuanxin Lian | 2024-04-16 |
| 11942518 | Reduced interfacial area III-nitride material semiconductor structures | Timothy E. Boles | 2024-03-26 |
| 11929408 | Layout techniques and optimization for power transistors | Shamit Som, Jason Barrett, Nishant R. Yamujala, John Stephen Atherton | 2024-03-12 |
| 11929364 | Parasitic capacitance reduction in GaN devices | Gabriel R. Cueva, Timothy E. Boles | 2024-03-12 |
| 11817450 | Heterolithic integrated circuits including integrated devices formed on semiconductor materials of different elemental composition | Timothy E. Boles | 2023-11-14 |
| 11640960 | Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor | Timothy E. Boles | 2023-05-02 |
| 11600614 | Microwave integrated circuits including gallium-nitride devices on silicon | Douglas Carlson, Timothy E. Boles | 2023-03-07 |
| 11417644 | Integration of multiple discrete GaN devices | Shamit Som, John Stephen Atherton, Jason Barrett, Nishant R. Yamujala | 2022-08-16 |
| 11233047 | Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon | Timothy E. Boles | 2022-01-25 |
| 11158575 | Parasitic capacitance reduction in GaN-on-silicon devices | Gabriel R. Cueva, Timothy E. Boles | 2021-10-26 |
| 11056483 | Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor | Timothy E. Boles | 2021-07-06 |
| 11038023 | III-nitride material semiconductor structures on conductive silicon substrates | Timothy E. Boles | 2021-06-15 |
| 11018220 | Device isolation design rules for HAST improvement | Allen W. Hanson, John Claassen Roberts | 2021-05-25 |
| 10950598 | Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor | Timothy E. Boles | 2021-03-16 |
| 9876469 | Voltage-controlled oscillator with mask-selectable performance | Eoin Carey, Ronan G. Brady, Shane M. Collins | 2018-01-23 |
| 9876082 | Transistor with hole barrier layer | Allen W. Hanson, Gabriel R. Cueva, Yan Zhang | 2018-01-23 |
| 9391561 | Laminate-based voltage-controlled oscillator | Eoin Carey, Ronan G. Brady, Shane M. Collins | 2016-07-12 |
| 9374037 | Voltage-controlled oscillator with mask-selectable performance | Eoin Carey, Ronan G. Brady, Shane M. Collins | 2016-06-21 |