Issued Patents All Time
Showing 1–25 of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12261207 | Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices | Chuanxin Lian, Wayne Mack Struble | 2025-03-25 |
| 11961888 | Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices | Chuanxin Lian, Wayne Mack Struble | 2024-04-16 |
| 11676860 | Barrier for preventing eutectic break-through in through-substrate vias | Rajesh Baskaran, Timothy E. Boles | 2023-06-13 |
| 11018220 | Device isolation design rules for HAST improvement | Wayne Mack Struble, John Claassen Roberts | 2021-05-25 |
| 10855230 | FET operational temperature determination by field plate resistance thermometry | Simon J. Mahon, Bryan Schwitter, Chuanxin Lian, Rajesh Baskaran, Frank Gao | 2020-12-01 |
| 10790787 | FET operational temperature determination by gate structure resistance thermometry | Simon J. Mahon, Chuanxin Lian, Frank Gao, Rajesh Baskaran, Bryan Schwitter | 2020-09-29 |
| 10147642 | Barrier for preventing eutectic break-through in through-substrate vias | Rajesh Baskaran, Timothy E. Boles | 2018-12-04 |
| 9978858 | Methods of manufacturing gallium nitride devices | Jerry W. Johnson, Sameer Singhal, Robert Joseph Therrien | 2018-05-22 |
| 9876082 | Transistor with hole barrier layer | Gabriel R. Cueva, Wayne Mack Struble, Yan Zhang | 2018-01-23 |
| 9773898 | III-nitride semiconductor structures comprising spatially patterned implanted species | John Claassen Roberts, Kevin J. Linthicum | 2017-09-26 |
| 9627473 | Parasitic channel mitigation in III-nitride material semiconductor structures | John Claassen Roberts, Kevin J. Linthicum, James W. Cook | 2017-04-18 |
| 9608102 | Gallium nitride material devices and associated methods | Jerry W. Johnson, Sameer Singhal, Robert Joseph Therrien | 2017-03-28 |
| 9318417 | Gallium nitride devices | Robert Joseph Therrien, Jerry W. Johnson | 2016-04-19 |
| 8946765 | Gallium nitride devices | Robert Joseph Therrien, Jerry W. Johnson | 2015-02-03 |
| 8859400 | Gallium nitride devices with conductive regions | Robert Joseph Therrien, Jerry W. Johnson | 2014-10-14 |
| 8680570 | Gallium nitride devices with vias | Robert Joseph Therrien, Jerry W. Johnson | 2014-03-25 |
| 8350288 | Gallium nitride devices with electrically conductive regions | Robert Joseph Therrien, Jerry W. Johnson | 2013-01-08 |
| 8343856 | Method for forming gallium nitride devices with conductive regions | Robert Joseph Therrien, Jerry W. Johnson | 2013-01-01 |
| 8288260 | Field effect transistor with dual etch-stop layers for improved power, performance and reproducibility | — | 2012-10-16 |
| 8288253 | InxGa1-xAsYP1-Y quaternary etch stop for improved chemical resistivity of gallium arsenide field effect transistors | Anthony Kaleta | 2012-10-16 |
| 8067786 | Gallium nitride material devices including conductive regions | Robert Joseph Therrien, Jerry W. Johnson | 2011-11-29 |
| 8026581 | Gallium nitride material devices including diamond regions and methods associated with the same | Edwin L. Piner | 2011-09-27 |
| 7994540 | Gallium nitride material transistors and methods associated with the same | Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook +8 more | 2011-08-09 |
| 7569871 | Gallium nitride material transistors and methods associated with the same | Walter H. Nagy, Jerry W. Johnson, Edwin L. Piner, Pradeep Rajagopal, John Claassen Roberts +8 more | 2009-08-04 |
| 7566913 | Gallium nitride material devices including conductive regions and methods associated with the same | Robert Joseph Therrien, Jerry W. Johnson | 2009-07-28 |