Issued Patents All Time
Showing 1–25 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11810955 | Parasitic channel mitigation using silicon carbide diffusion barrier regions | — | 2023-11-07 |
| 11264465 | Parasitic channel mitigation using silicon carbide diffusion barrier regions | — | 2022-03-01 |
| 10177229 | Semiconductor material having a compositionally-graded transition layer | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2019-01-08 |
| 9806182 | Parasitic channel mitigation using elemental diboride diffusion barrier regions | — | 2017-10-31 |
| 9773898 | III-nitride semiconductor structures comprising spatially patterned implanted species | John Claassen Roberts, Allen W. Hanson | 2017-09-26 |
| 9673281 | Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions | John Claassen Roberts | 2017-06-06 |
| 9627473 | Parasitic channel mitigation in III-nitride material semiconductor structures | John Claassen Roberts, Allen W. Hanson, James W. Cook | 2017-04-18 |
| 9461119 | Semiconductor structure with compositionally-graded transition layer | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2016-10-04 |
| 9437687 | III-nitride based semiconductor structure | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2016-09-06 |
| 9437686 | Gallium nitride devices with discontinuously graded transition layer | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2016-09-06 |
| 9064775 | Gallium nitride semiconductor structures with compositionally-graded transition layer | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2015-06-23 |
| 8937335 | Gallium nitride devices with aluminum nitride intermediate layer | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2015-01-20 |
| 8928035 | Gallium nitride devices with gallium nitride alloy intermediate layer | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2015-01-06 |
| 8928034 | Gallium nitride devices with aluminum nitride alloy intermediate layer | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2015-01-06 |
| 8592862 | Gallium nitride semiconductor structures with compositionally-graded transition layer | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2013-11-26 |
| 8344417 | Gallium nitride semiconductor structures with compositionally-graded transition layer | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2013-01-01 |
| 8105921 | Gallium nitride materials and methods | T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke | 2012-01-31 |
| 7994540 | Gallium nitride material transistors and methods associated with the same | Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook +8 more | 2011-08-09 |
| 7791106 | Gallium nitride material structures including substrates and methods associated with the same | Edwin L. Piner, Pradeep Rajagopal, John Claassen Roberts | 2010-09-07 |
| 7569871 | Gallium nitride material transistors and methods associated with the same | Walter H. Nagy, Jerry W. Johnson, Edwin L. Piner, Pradeep Rajagopal, John Claassen Roberts +8 more | 2009-08-04 |
| 7378684 | Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates | Thomas Gehrke, Darren Thomson, Eric P. Carlson, Pradeep Rajagopal, Robert F. Davis | 2008-05-27 |
| 7365374 | Gallium nitride material structures including substrates and methods associated with the same | Edwin L. Piner, Pradeep Rajagopal, John Claassen Roberts | 2008-04-29 |
| 7361946 | Semiconductor device-based sensors | Jerry W. Johnson, Edwin L. Piner | 2008-04-22 |
| 7352016 | Gallium nitride material transistors and methods associated with the same | Walter H. Nagy, Ricardo M. Borges, Jeffrey D. Brown, Apurva D. Chaudhari, James W. Cook +8 more | 2008-04-01 |
| 7233028 | Gallium nitride material devices and methods of forming the same | T. Warren Weeks, Jr. | 2007-06-19 |