Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7855108 | Semiconductor heterojunction devices based on SiC | Narsingh B. Singh, Brian Wagner, David J. Knuteson, Michael Edward Aumer, Andre Berghmans +1 more | 2010-12-21 |
| 7683400 | Semiconductor heterojunction devices based on SiC | Narsingh B. Singh, Brian Wagner, David J. Knuteson, Michael Edward Aumer, Andre Berghmans +1 more | 2010-03-23 |
| 7525099 | Nuclear radiation detection system | Narsingh B. Singh, Aaron A. Pesetski, Andre Berghmans, Brian Wagner, David Kahler +1 more | 2009-04-28 |
| 7378684 | Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates | Kevin J. Linthicum, Thomas Gehrke, Eric P. Carlson, Pradeep Rajagopal, Robert F. Davis | 2008-05-27 |
| 7371282 | Solid solution wide bandgap semiconductor materials | Narsingh B. Singh, Brian Wagner, Mike Aumer, David Kahler, Andre Berghmans +1 more | 2008-05-13 |
| 7217947 | Semiconductor light source and method of making | Rowland C. Clarke, Michel E. Aumer | 2007-05-15 |
| 7195993 | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches | Tsvetanka Zheleva, Scott A. Smith, Kevin J. Linthicum, Thomas Gehrke, Robert F. Davis | 2007-03-27 |
| 6897483 | Second gallium nitride layers that extend into trenches in first gallium nitride layers | Tsvetanka Zheleva, Scott A. Smith, Kevin J. Linthicum, Thomas Gehrke, Robert F. Davis | 2005-05-24 |
| 6602764 | Methods of fabricating gallium nitride microelectronic layers on silicon layers | Kevin J. Linthicum, Thomas Gehrke, Robert F. Davis, Kieran Mark Tracy | 2003-08-05 |
| 6489221 | High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates | Thomas Gehrke, Kevin J. Linthicum, Robert F. Davis | 2002-12-03 |
| 6462355 | Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates | Kevin J. Linthicum, Thomas Gehrke, Eric P. Carlson, Pradeep Rajagopal, Robert F. Davis | 2002-10-08 |
| 6376339 | PENDEOEPITAXIAL METHODS OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LAYERS ON SILICON CARBIDE SUBSTRATES BY LATERAL GROWTH FROM SIDEWALLS OF MASKED POSTS, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES FABRICATED THEREBY | Kevin J. Linthicum, Thomas Gehrke, Eric P. Carlson, Pradeep Rajagopal, Robert F. Davis | 2002-04-23 |
| 6265289 | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby | Tsvetanka Zheleva, Scott A. Smith, Kevin J. Linthicum, Thomas Gehrke, Robert F. Davis | 2001-07-24 |
| 6255198 | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby | Kevin J. Linthicum, Thomas Gehrke, Robert F. Davis, Kieran Mark Tracy | 2001-07-03 |
| 6177688 | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates | Kevin J. Linthicum, Thomas Gehrke, Eric P. Carlson, Pradeep Rajagopal, Robert F. Davis | 2001-01-23 |