Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming shallow trench isolation structures for integrated circuits

Method of forming shallow trench isolation structures for integrated circuits

US Patent 8178417 · Granted May 15, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Battery energy processing apparatus and method, and vehicle2025
Trench capacitor having improved capacitance and fabrication method thereof2023
Method for fabricating semiconductor memory device with buried capacitor and fin2023
Automated determination of software testing resources2022
Stacked capacitor with horizontal and vertical fin structures and method for mak2022
Semiconductor memory device with buried capacitor and fin-like electrodes2022
Internet cloud-hosted natural language interactive messaging system with virtual2022
Trench capacitor having improved capacitance and fabrication method thereof2021
Semiconductor memory device with shallow buried capacitor and fabrication method2021
Device with large EPI in FinFETs and method of manufacturing2021
Automated determination of software testing resources2021
Method for forming a metal gate including de-oxidation of an oxidized surface of2020