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Home › Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content

Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content

US Patent 7540971 · Granted Jun 2, 2009

Estimated economic value: $19,554,000 ⓘ

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