Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing

Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing

US Patent 7226869 · Granted Jun 5, 2007

Estimated economic value: $15,368,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and apparatus for etching a semiconductor substrate in a plasma etch cham2025
Bias voltage modulation approach for SiO/SiN layer alternating etch process2025
Method of enhancing etching selectivity using a pulsed plasma2022
Method of forming an object using 3D printing2022
Adjustable holding assembly2020
Adhesion to build plate in 3D printer2020
Methods and apparatus for in situ substrate temperature monitoring by electromag2018
Fabrication of a silicon structure and deep silicon etch with profile control2018
Transmission device, display device, and display system2017
Method and apparatus for physical confinement of a liquid meniscus over a semico2017
Precise critical dimension control using bilayer ALD2016
Self-tuned dielectric barrier discharge2016