Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Bias voltage modulation approach for SiO/SiN layer alternating etch process

Bias voltage modulation approach for SiO/SiN layer alternating etch process

US Patent 12278110 · Granted Apr 15, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Systems and methods for controlling a voltage waveform at a substrate during pla2025
Stress and overlay management for semiconductor processing2025
Method and apparatus for etching a semiconductor substrate in a plasma etch cham2025
Plasma processing assembly using pulsed-voltage and radio-frequency power2025
High pressure wafer processing systems and related methods2025
Wafer edge ring lifting solution2024
Feedback loop for controlling a pulsed voltage waveform2024
Methods and systems for UV LED structures2024
Plasma processing using pulsed-voltage and radio-frequency power2023
Plasma processing assembly using pulsed-voltage and radio-frequency power2023
Gas delivery system for high pressure processing chamber2023
Creating ion energy distribution functions (IEDF)2023