Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of enhancing etching selectivity using a pulsed plasma

Method of enhancing etching selectivity using a pulsed plasma

US Patent 11495470 · Granted Nov 8, 2022

Estimated economic value: $47,551,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Plasma processing chambers configured for tunable substrate and edge sheath cont2025
Machine learning techniques for generating visualization recommendations2025
Method for etching high aspect ratio structures2025
Systems and methods for controlling a voltage waveform at a substrate during pla2025
Apparatus and method for controlling edge ring variation2025
Condition selectable backside gas2025
Methods and apparatus for conductance liners in semiconductor process chambers2025
Stress and overlay management for semiconductor processing2025
Method and apparatus for etching a semiconductor substrate in a plasma etch cham2025
Enhanced etch selectivity using halides2025
Bias voltage modulation approach for SiO/SiN layer alternating etch process2025
Bias voltage modulation approach for SiO/SiN layer alternating etch process2025