Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11078596 | Method for evaluating quality of SiC single crystal body and method for producing silicon carbide single crystal ingot using the same | Shoji Ushio | 2021-08-03 |
| 10711369 | Method for producing silicon carbide single crystal and silicon carbide single crystal substrate | Shinya Sato, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge | 2020-07-14 |
| 10526722 | Method for manufacturing silicon carbide single crystal | Kiyoshi Kojima, Hiroyuki Deai, Kota Shimomura, Yukio Nagahata | 2020-01-07 |
| 10202706 | Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingot | Kota Shimomura, Yukio Nagahata, Kiyoshi Kojima | 2019-02-12 |
| 10048142 | Evaluation method for bulk silicon carbide single crystals and reference silicon carbide single crystal used in said method | Kiyoshi Kojima | 2018-08-14 |
| 10031089 | Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer | Kiyoshi Kojima, Kota Shimomura, Yukio Nagahata | 2018-07-24 |
| 9915011 | Low resistivity single crystal silicon carbide wafer | Tatsuo Fujimoto, Noboru Ohtani, Masakazu Katsuno, Hirokatsu Yashiro | 2018-03-13 |
| 9777403 | Single-crystal silicon carbide and single-crystal silicon carbide wafer | Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge | 2017-10-03 |
| 9691607 | Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same | Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakazu Katsuno +1 more | 2017-06-27 |
| 9068277 | Apparatus for manufacturing single-crystal silicon carbide | Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Noboru Ohtani | 2015-06-30 |
| 8936680 | Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method | Masakazu Katsuno, Tatsuo Fujimoto, Hiroshi Tsuge | 2015-01-20 |
| 8901570 | Epitaxial silicon carbide single crystal substrate and process for producing the same | Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakazu Katsuno +1 more | 2014-12-02 |
| 8795624 | Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same | Tatsuo Fujimoto, Mitsuru Sawamura, Noboru Ohtani | 2014-08-05 |
| 8673254 | Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same | Tatsuo Fujimoto, Mitsuru Sawamura, Noboru Ohtani | 2014-03-18 |
| 8491719 | Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same | Tatsuo Fujimoto, Mitsuru Sawamura, Noboru Ohtani | 2013-07-23 |
| 8178389 | Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same | Tatsuo Fujimoto, Mitsuru Sawamura, Noboru Ohtani | 2012-05-15 |
| 8044408 | SiC single-crystal substrate and method of producing SiC single-crystal substrate | Tatsuo Fujimoto, Kohei Tatsumi, Taizo Hoshino, Masakazu Katsuno, Noboru Ohtani +3 more | 2011-10-25 |
| 7972704 | Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom | Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge, Tatsuo Fujimoto | 2011-07-05 |
| 7799305 | Silicon carbide single crystal and single crystal wafer | Mitsuru Sawamura, Tatsuo Fujimoto, Noboru Ohtani | 2010-09-21 |
| 7794842 | Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same | Tatsuo Fujimoto, Mitsuru Sawamura, Noboru Ohtani | 2010-09-14 |
| 6953538 | Electroconductive low thermal expansion ceramic sintered body | Fumiaki Takahashi, Tetsuro Nose | 2005-10-11 |