Issued Patents All Time
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9691607 | Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same | Takashi Aigo, Hiroshi Tsuge, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi +1 more | 2017-06-27 |
| 8901570 | Epitaxial silicon carbide single crystal substrate and process for producing the same | Takashi Aigo, Hiroshi Tsuge, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi +1 more | 2014-12-02 |
| 8044408 | SiC single-crystal substrate and method of producing SiC single-crystal substrate | Tatsuo Fujimoto, Kohei Tatsumi, Masakazu Katsuno, Noboru Ohtani, Masashi Nakabayashi +3 more | 2011-10-25 |
| 6548886 | Silicon semiconductor wafer and method for producing the same | Atsushi Ikari, Masami Hasebe, Katsuhiko Nakai, Hikaru Sakamoto, Wataru Ohashi +1 more | 2003-04-15 |