Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10711369 | Method for producing silicon carbide single crystal and silicon carbide single crystal substrate | Shinya Sato, Tatsuo Fujimoto, Hiroshi Tsuge, Masashi Nakabayashi | 2020-07-14 |
| 10119200 | Silicon carbide single crystal substrate and process for producing same | Shinya Sato, Tatsuo Fujimoto, Hiroshi Tsuge | 2018-11-06 |
| 9915011 | Low resistivity single crystal silicon carbide wafer | Tatsuo Fujimoto, Noboru Ohtani, Masashi Nakabayashi, Hirokatsu Yashiro | 2018-03-13 |
| 9777403 | Single-crystal silicon carbide and single-crystal silicon carbide wafer | Masashi Nakabayashi, Tatsuo Fujimoto, Hiroshi Tsuge | 2017-10-03 |
| 9691607 | Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same | Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masashi Nakabayashi +1 more | 2017-06-27 |
| 9234297 | Silicon carbide single crystal wafer and manufacturing method for same | Shinya Sato, Tatsuo Fujimoto, Hiroshi Tsuge | 2016-01-12 |
| 9068277 | Apparatus for manufacturing single-crystal silicon carbide | Masashi Nakabayashi, Tatsuo Fujimoto, Hiroshi Tsuge, Noboru Ohtani | 2015-06-30 |
| 8936680 | Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method | Tatsuo Fujimoto, Hiroshi Tsuge, Masashi Nakabayashi | 2015-01-20 |
| 8927396 | Production process of epitaxial silicon carbide single crystal substrate | Takashi Aigo, Hiroshi Tsuge, Tatsuo Fujimoto, Hirokatsu Yashiro | 2015-01-06 |
| 8901570 | Epitaxial silicon carbide single crystal substrate and process for producing the same | Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masashi Nakabayashi +1 more | 2014-12-02 |
| 8044408 | SiC single-crystal substrate and method of producing SiC single-crystal substrate | Tatsuo Fujimoto, Kohei Tatsumi, Taizo Hoshino, Noboru Ohtani, Masashi Nakabayashi +3 more | 2011-10-25 |
| 7972704 | Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom | Noboru Ohtani, Hiroshi Tsuge, Masashi Nakabayashi, Tatsuo Fujimoto | 2011-07-05 |