Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11114295 | Epitaxial silicon carbide single crystal wafer and process for producing the same | Wataru Ito, Tatsuo Fujimoto | 2021-09-07 |
| 10727047 | Epitaxial silicon carbide single crystal wafer and process for producing the same | Wataru Ito, Tatsuo Fujimoto | 2020-07-28 |
| 10626520 | Method for producing epitaxial silicon carbide single crystal wafer | Wataru Ito, Tatsuo Fujimoto | 2020-04-21 |
| 10450672 | Method for producing epitaxial silicon carbide wafers | Wataru Ito, Tatsuo Fujimoto | 2019-10-22 |
| 10435813 | Epitaxial growth method for silicon carbide | Wataru Ito, Tatsuo Fujimoto | 2019-10-08 |
| 9957639 | Method for producing epitaxial silicon carbide wafer | Wataru Ito, Tatsuo Fujimoto | 2018-05-01 |
| 9691607 | Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same | Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi +1 more | 2017-06-27 |
| 8927396 | Production process of epitaxial silicon carbide single crystal substrate | Hiroshi Tsuge, Masakazu Katsuno, Tatsuo Fujimoto, Hirokatsu Yashiro | 2015-01-06 |
| 8901570 | Epitaxial silicon carbide single crystal substrate and process for producing the same | Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi +1 more | 2014-12-02 |
| 5833749 | Compound semiconductor substrate and process of producing same | Akihiro Moritani, Aiji Yabe, Akiyoshi Tachikawa | 1998-11-10 |
| 5689124 | Semiconductor device | Yoji Morikawa | 1997-11-18 |
| 5438951 | Method of growing compound semiconductor on silicon wafer | Akiyoshi Tachikawa, Aiji Jono, Akihiro Moritani | 1995-08-08 |