Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10013523 | Full-chip assessment of time-dependent dielectric breakdown | Xin-Hua Huang | 2018-07-03 |
| 9836569 | Leakage reduction using stress-enhancing filler cells | Junho Choy, Armen Kteyan, Henrik Hovsepyan | 2017-12-05 |
| 9740804 | Chip-scale electrothermal analysis | Armen Kteyan, Junho Choy, Henrik Hovsepyan | 2017-08-22 |
| 9135391 | Determination of electromigration susceptibility based on hydrostatic stress analysis | Patrick D. Gibson, William Matthew Hogan, Sridhar Srinivasan | 2015-09-15 |
| 7687303 | Method for determining via/contact pattern density effect in via/contact etch rate | Ara Markosian | 2010-03-30 |
| 7408227 | Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide | Mohammad Mirabedini | 2008-08-05 |
| 7138292 | Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide | Mohammad Mirabedini | 2006-11-21 |
| 6935933 | Viscous electropolishing system | Wilbur G. Catabay | 2005-08-30 |
| 6777807 | Interconnect integration | Wilbur G. Catabay, Hongqiang Lu | 2004-08-17 |
| 6759337 | Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate | Sheldon Aronowitz, John Haywood, James Kimball, Helmut Puchner, Ravindra M. Kapre +1 more | 2004-07-06 |
| 6524974 | FORMATION OF IMPROVED LOW DIELECTRIC CONSTANT CARBON-CONTAINING SILICON OXIDE DIELECTRIC MATERIAL BY REACTION OF CARBON-CONTAINING SILANE WITH OXIDIZING AGENT IN THE PRESENCE OF ONE OR MORE REACTION RETARDANTS | — | 2003-02-25 |
| 6506678 | Integrated circuit structures having low k porous aluminum oxide dielectric material separating aluminum lines, and method of making same | — | 2003-01-14 |
| 6426286 | Interconnection system with lateral barrier layer | Richard Schinella | 2002-07-30 |
| 6365528 | LOW TEMPERATURE PROCESS FOR FORMING A LOW DIELECTRIC CONSTANT FLUORINE AND CARBON-CONTAINING SILICON OXIDE DIELECTRIC-MATERIAL CHARACTERIZED BY IMPROVED RESISTANCE TO OXIDATION AND GOOD GAP-FILLING CAPABILITIES | Vladimir Zubkov | 2002-04-02 |
| 6303047 | Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same | Sheldon Aronowitz, Vladimir Zubkov | 2001-10-16 |
| 6147012 | Process for forming low k silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant | Wei-Jen Hsia | 2000-11-14 |
| 6114259 | Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage | Warren M. Uesato, John Hu, Wei-Jen Hsia, Linggian Qian | 2000-09-05 |
| 6087229 | Composite semiconductor gate dielectrics | Sheldon Aronowitz, David Chan, James Kimball, David Lee, John Haywood | 2000-07-11 |
| 6033998 | Method of forming variable thickness gate dielectrics | Sheldon Aronowitz, David Chan, James Kimball, David Lee, John Haywood | 2000-03-07 |
| 6030460 | Method and apparatus for forming dielectric films | — | 2000-02-29 |
| 5837598 | Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same | Sheldon Aronowitz, Jon S. Owyang, John Haywood | 1998-11-17 |
| 5710079 | Method and apparatus for forming dielectric films | — | 1998-01-20 |