| 12159372 |
Systems and methods of multiview style transfer |
Nicolas Dahlquist, Saravana Gunaseelan, Edward Li |
2024-12-03 |
| 9059032 |
SRAM cell parameter optimization |
Theodore W. Houston, Amitava Chatterjee |
2015-06-16 |
| 8217426 |
Bipolar transistors with resistors |
— |
2012-07-10 |
| 7960238 |
Multiple indium implant methods and devices and integrated circuits therefrom |
Manoj Mehrotra |
2011-06-14 |
| 7897496 |
Semiconductor doping with reduced gate edge diode leakage |
Nandakumar Mahalingam, Manoj Mehrotra, Song Zhao |
2011-03-01 |
| 7846783 |
Use of poly resistor implant to dope poly gates |
Manoj Mehrotra |
2010-12-07 |
| 7737015 |
Formation of fully silicided gate with oxide barrier on the source/drain silicide regions |
Craig Huffman, Manfred Ramin |
2010-06-15 |
| 7736983 |
High threshold NMOS source-drain formation with As, P and C to reduce damage |
Manoj Mehrotra, Shaoping Tang |
2010-06-15 |
| 7611939 |
Semiconductor device manufactured using a laminated stress layer |
Manoj Mehrotra, Antonio L. P. Rotondaro |
2009-11-03 |
| 7560379 |
Semiconductive device fabricated using a raised layer to silicide the gate |
Manfred Ramin |
2009-07-14 |
| 7531436 |
Highly conductive shallow junction formation |
— |
2009-05-12 |
| 7524777 |
Method for manufacturing an isolation structure using an energy beam treatment |
Manoj Mehrotra, Jin Zhao, Sameer Ajmera |
2009-04-28 |
| 7465635 |
Method for manufacturing a gate sidewall spacer using an energy beam treatment |
Manoj Mehrotra, Jin Zhao, Sameer Ajmera |
2008-12-16 |
| 7163878 |
Ultra-shallow arsenic junction formation in silicon germanium |
Mark S. Rodder, Rick L. Wise, Amitabh Jain |
2007-01-16 |