Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12365984 | Transition metal deposition processes and deposition assembly | Janne-Petteri Niemelä, Elina Färm, Charles Dezelah, Jan Willem Maes | 2025-07-22 |
| 12344627 | Scandium precursor for SC2O3 or SC2S3 atomic layer deposition | — | 2025-07-01 |
| 11866453 | Scandium precursor for SC2O3 or SC2S3 atomic layer deposition | — | 2024-01-09 |
| 11532724 | Selective gate spacers for semiconductor devices | Scott B. Clendenning, Szuya S. Liao, Florian Gstrein, Rami Hourani, Grant Kloster +1 more | 2022-12-20 |
| 11512098 | Scandium precursor for SC2O3 or SC2S3 atomic layer deposition | — | 2022-11-29 |
| 11270887 | Passivation layer for germanium substrate | Scott B. Clendenning, Florian Gstrein, Cen Tan | 2022-03-08 |
| 10971600 | Selective gate spacers for semiconductor devices | Scott B. Clendenning, Szuya S. Liao, Florian Gstrein, Rami Hourani, Grant Kloster +1 more | 2021-04-06 |
| 10756215 | Selective deposition utilizing sacrificial blocking layers for semiconductor devices | Grant Kloster, Scott B. Clendenning, Rami Hourani, Szuya S. Liao, Florian Gstrein | 2020-08-25 |
| 10464959 | Inherently selective precursors for deposition of second or third row transition metal thin films | — | 2019-11-05 |
| 10396176 | Selective gate spacers for semiconductor devices | Scott B. Clendenning, Szuya S. Liao, Florian Gstrein, Rami Hourani, Grant Kloster +1 more | 2019-08-27 |
| 10243080 | Selective deposition utilizing sacrificial blocking layers for semiconductor devices | Grant Kloster, Scott B. Clendenning, Rami Hourani, Szuya S. Liao, Florian Gstrein | 2019-03-26 |
| 10217646 | Transition metal dry etch by atomic layer removal of oxide layers for device fabrication | John J. Plombon | 2019-02-26 |
| 9932671 | Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD) | James M. Blackwell, Scott B. Clendenning, Grant Kloster, Florian Gstrein, Harsono S. Simka +2 more | 2018-04-03 |
| 9786559 | Process and material for preventing deleterious expansion of high aspect ratio copper filled through silicon vias (TSVs) | Paul A. Zimmerman, Scott B. Clendenning, Paul B. Fischer, Robert Edgeworth | 2017-10-10 |
| 9583389 | Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) | Scott B. Clendenning, Jeanette M. Roberts, Florian Gstrein | 2017-02-28 |
| 9530733 | Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions | Robert L. Bristol, James M. Blackwell, Scott B. Clendenning, Florian Gstrein, Eungnak Han +3 more | 2016-12-27 |
| 9455150 | Conformal thin film deposition of electropositive metal alloy films | Scott B. Clendenning, Gilbert Dewey | 2016-09-27 |
| 9390932 | Electropositive metal containing layers for semiconductor applications | Scott B. Clendenning | 2016-07-12 |
| 9385033 | Method of forming a metal from a cobalt metal precursor | James M. Blackwell, Scott B. Clendenning, John J. Plombon | 2016-07-05 |
| 9236292 | Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) | Scott B. Clendenning, Jeanette M. Roberts, Florian Gstrein | 2016-01-12 |
| 9090964 | Additives to improve the performance of a precursor source for cobalt deposition | James M. Blackwell, Daniel Bergstrom, Scott B. Clendenning | 2015-07-28 |
| 9067958 | Scalable and high yield synthesis of transition metal bis-diazabutadienes | — | 2015-06-30 |
| 8952355 | Electropositive metal containing layers for semiconductor applications | Scott B. Clendenning | 2015-02-10 |