HW

Hsingjen Wann

IBM: 6 patents #16,453 of 70,183Top 25%
TSMC: 5 patents #4,208 of 12,232Top 35%
📍 Carmel, NY: #34 of 217 inventorsTop 20%
🗺 New York: #13,384 of 115,490 inventorsTop 15%
Overall (All Time): #453,000 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
10964817 (110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor device Chao-Ching Cheng, Chih-Hsin Ko 2021-03-30
10770588 (110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor device Chao-Ching Cheng, Chih-Hsin Ko 2020-09-08
9406518 (110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor substrate Chao-Ching Cheng, Chih-Hsin Ko 2016-08-02
9105661 Fin field effect transistor gate oxide Gin-Chen Huang, Neng-Kuo Chen 2015-08-11
8716863 Structure and method for high performance interconnect Ting-Chu Ko 2014-05-06
8268698 Formation of improved SOI substrates using bulk semiconductor wafers William K. Henson, Dureseti Chidambarrao, Kern Rim, Hung Y. Ng 2012-09-18
7932158 Formation of improved SOI substrates using bulk semiconductor wafers William K. Henson, Dureseti Chidambarrao, Kern Rim, Hung Y. Ng 2011-04-26
7452784 Formation of improved SOI substrates using bulk semiconductor wafers William K. Henson, Dureseti Chidambarrao, Kern Rim, Hung Y. Ng 2008-11-18
6876040 Dense SRAM cells with selective SOI Ying Zhang, Robert C. Wong, An Steegen 2005-04-05
6093947 Recessed-gate MOSFET with out-diffused source/drain extension Hussein I. Hanafi, Young Hoon Lee 2000-07-25
6063699 Methods for making high-aspect ratio holes in semiconductor and its application to a gate damascene process for sub- 0.05 micron mosfets Hussein I. Hanafi, Young Hoon Lee 2000-05-16