Issued Patents All Time
Showing 25 most recent of 49 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8563444 | ALD of metal silicate films | Chang-Gong Wang, Eric James Shero | 2013-10-22 |
| 8334218 | Method of forming non-conformal layers | Sebastian E. Van Nooten, Jan Willem Maes, Steven Marcus, Petri Raisanen, Kai-Erik Elers | 2012-12-18 |
| 8268409 | Plasma-enhanced deposition of metal carbide films | Kai-Erik Elers, Steven Marcus | 2012-09-18 |
| 7972977 | ALD of metal silicate films | Chang-Gong Wang, Eric James Shero | 2011-07-05 |
| 7799680 | Surface preparation prior to deposition on germanium | — | 2010-09-21 |
| 7795160 | ALD of metal silicate films | Chang-Gong Wang, Eric James Shero, Jan Willem Maes | 2010-09-14 |
| 7666474 | Plasma-enhanced pulsed deposition of metal carbide films | Dong Li, Steven Marcus, Brennan Milligan | 2010-02-23 |
| 7608549 | Method of forming non-conformal layers | Sebastian E. Van Nooten, Jan Willem Maes, Steven Marcus, Petri Raisanen, Kai-Erik Elers | 2009-10-27 |
| 7253063 | Method of fabricating a composite gate dielectric layer | David Müller, Gregory Timp | 2007-08-07 |
| 7223677 | Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate | Martin M. Frank, Yves Chabal, Martin L. Green | 2007-05-29 |
| 7202166 | Surface preparation prior to deposition on germanium | — | 2007-04-10 |
| 7115461 | High permittivity silicate gate dielectric | John Mark Anthony, Scott R. Summerfelt, Robert M. Wallace | 2006-10-03 |
| 7030038 | Low temperature method for forming a thin, uniform oxide | Robert M. Wallace, Berinder Brar | 2006-04-18 |
| 6897105 | Method of forming metal oxide gate structures and capacitor electrodes | Robert M. Wallace, John Mark Anthony, Paul McIntyre | 2005-05-24 |
| 6841439 | High permittivity silicate gate dielectric | John Mark Anthony, Scott R. Summerfelt, Robert M. Wallace | 2005-01-11 |
| 6825538 | Semiconductor device using an insulating layer having a seed layer | Martin M. Frank, Yves Chabal | 2004-11-30 |
| 6821835 | Chemical vapor deposition of silicate high dielectric constant materials | — | 2004-11-23 |
| 6797525 | Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process | Martin L. Green | 2004-09-28 |
| 6770536 | Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate | Peide Ye | 2004-08-03 |
| 6734068 | Method to form silicates as high dielectric constant materials | — | 2004-05-11 |
| 6730977 | Lower temperature method for forming high quality silicon-nitrogen dielectrics | John Mark Anthony, Yi Wei, Robert M. Wallace | 2004-05-04 |
| 6723581 | Semiconductor device having a high-K gate dielectric and method of manufacture thereof | Yves Chabal, Martin L. Green | 2004-04-20 |
| 6613698 | Lower temperature method for forming high quality silicon-nitrogen dielectrics | John Mark Anthony, Yi Wei, Robert M. Wallace | 2003-09-02 |
| 6560377 | Non-hermetic packaging for lithium niobate-based devices | Christopher Jones | 2003-05-06 |
| 6552388 | Hafnium nitride gate dielectric | Robert M. Wallace | 2003-04-22 |