Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10535674 | Method of forming a semiconductor device structure and semiconductor device structure | Juergen Faul | 2020-01-14 |
| 10466126 | MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI) | Juergen Faul | 2019-11-05 |
| 10056369 | Semiconductor device including buried capacitive structures and a method of forming the same | Peter Baars | 2018-08-21 |
| 9929148 | Semiconductor device including buried capacitive structures and a method of forming the same | Peter Baars | 2018-03-27 |
| 9748259 | Method of forming a semiconductor device structure and semiconductor device structure | Juergen Faul | 2017-08-29 |
| 9324854 | Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure | Till Schloesser, Peter Baars | 2016-04-26 |
| 9299616 | Integrated circuits with separate workfunction material layers and methods for fabricating the same | Juergen Faul | 2016-03-29 |
| 9236240 | Wafer edge protection | Qiaoming CAI, Wurster Kai, Chunyan Xin | 2016-01-12 |
| 9064733 | Contact structure for a semiconductor device and methods of making same | Juergen Faul | 2015-06-23 |
| 9023715 | Methods of forming bulk FinFET devices so as to reduce punch through leakage currents | Juergen Faul | 2015-05-05 |
| 8962414 | Reduced spacer thickness in semiconductor device fabrication | Juergen Faul | 2015-02-24 |
| 8956928 | Contact structure for a semiconductor device and methods of making same | Juergen Faul | 2015-02-17 |
| 8951920 | Contact landing pads for a semiconductor device and methods of making same | Juergen Faul | 2015-02-10 |
| 8853051 | Methods of recessing an active region and STI structures in a common etch process | Jorg Radecker, Frank Ludwig | 2014-10-07 |
| 8835245 | Semiconductor device comprising self-aligned contact elements | Peter Baars, Till Schloesser, Andy Wei, Richard J. Carter, Matthias Schaller | 2014-09-16 |
| 8823149 | Contact landing pads for a semiconductor device and methods of making same | Juergen Faul | 2014-09-02 |
| 8722523 | Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure | Till Schloesser, Peter Baars | 2014-05-13 |
| 8716102 | Methods of forming isolation structures for semiconductor devices by performing a dry chemical removal process | Joerg Radecker, Joanna Wasyluk | 2014-05-06 |
| 8716077 | Replacement gate compatible eDRAM transistor with recessed channel | Till Schloesser, Peter Baars | 2014-05-06 |
| 8697557 | Method of removing gate cap materials while protecting active area | Peter Baars, Till Schloesser | 2014-04-15 |
| 8679940 | Methods for fabricating semiconductor devices with isolation regions having uniform stepheights | Jorg Radecker, Frank Ludwig | 2014-03-25 |
| 8673696 | SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage | Peter Baars, Jens Heinrich, Marco Lepper, Jana Schlott, Kai Frohberg | 2014-03-18 |
| 8609457 | Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making same | Peter Baars, Till Schloesser | 2013-12-17 |
| 8603895 | Methods of forming isolation structures for semiconductor devices by performing a deposition-etch-deposition sequence | Joerg Radecker, Ralf B. Willecke | 2013-12-10 |
| 8455960 | High performance HKMG stack for gate first integration | Peter Baars, Till Schloesser | 2013-06-04 |