Issued Patents All Time
Showing 25 most recent of 71 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12148819 | System and method for bi-directional trench power switches | Jiankang Bu, Alireza Mojab, Jeffrey KNAPP, Robert Daniel BRDAR | 2024-11-19 |
| 11881525 | Semiconductor device with bi-directional double-base trench power switches | Jiankang Bu, Alireza Mojab, Jeffrey KNAPP, Robert Daniel BRDAR | 2024-01-23 |
| 10319809 | Structures to avoid floating resurf layer in high voltage lateral devices | Yongxi Zhang, Philip L. Hower, John Lin, Guru Mathur, Scott Balster +2 more | 2019-06-11 |
| 9876071 | Structures to avoid floating RESURF layer in high voltage lateral devices | Yongxi Zhang, Philip L. Hower, John Lin, Guru Mathur, Scott Balster +2 more | 2018-01-23 |
| 8735980 | Configuration and fabrication of semiconductor structure using empty and filled wells | Sandeep R. Bahl, William French, Jeng-Jiun Yang, Donald M. Archer, David C. Parker +1 more | 2014-05-27 |
| 8629027 | Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions | William French, Sandeep R. Bahl, Jeng-Jiun Yang, D. Courtney Parker, Peter Johnson +1 more | 2014-01-14 |
| 8610207 | Semiconductor architecture having field-effect transistors especially suitable for analog applications | — | 2013-12-17 |
| 8513703 | Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same | Sandeep R. Bahl | 2013-08-20 |
| 8502273 | Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the same | Sandeep R. Bahl | 2013-08-06 |
| 8415752 | Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone | Jeng-Jiun Yang, Sandeep R. Bahl | 2013-04-09 |
| 8410549 | Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket | Jeng-Jiun Yang, William French, Sandeep R. Bahl, D. Courtney Parker | 2013-04-02 |
| 8395212 | Semiconductor architecture having field-effect transistors especially suitable for analog applications | — | 2013-03-12 |
| 8377768 | Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses | William French, Donald M. Archer, Jeng-Jiun Yang, Sandeep R. Bahl, D. Courtney Parker | 2013-02-19 |
| 8309420 | Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications | — | 2012-11-13 |
| 8304320 | Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants | Sandeep R. Bahl, William French | 2012-11-06 |
| 8304835 | Configuration and fabrication of semiconductor structure using empty and filled wells | Sandeep R. Bahl, William French, Jeng-Jiun Yang, Donald M. Archer, D. Courtney Parker +1 more | 2012-11-06 |
| 8304308 | Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length | Jeng-Jiun Yang | 2012-11-06 |
| 8258026 | Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications | — | 2012-09-04 |
| 8163619 | Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone | Jeng-Jiun Yang, Sandeep R. Bahl | 2012-04-24 |
| 8148777 | Structure and fabrication of insulated-gate field-effect transistor with hypoabrupt change in body dopant concentration below source/drain zone | — | 2012-04-03 |
| 8129262 | Fabrication of field-effect transistor with vertical body-material dopant profile tailored to alleviate punchthrough and reduce current leakage | Fu-Cheng Wang, Prasad Chaparala | 2012-03-06 |
| 8101479 | Fabrication of asymmetric field-effect transistors using L-shaped spacers | D. Courtney Parker, Donald M. Archer, Sandeep R. Bahl, William French, Peter Johnson +1 more | 2012-01-24 |
| 8084827 | Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses | William French, Donald M. Archer, Jeng-Jiun Yang, Sandeep R. Bahl, D. Courtney Parker | 2011-12-27 |
| 8034679 | Fabrication of field-effect transistor having hypoabrupt body dopant distribution below source/drain zone | — | 2011-10-11 |
| 8030151 | Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length | Jeng-Jiun Yang | 2011-10-04 |