DP

D. Courtney Parker

NS National Semiconductor: 8 patents #229 of 2,238Top 15%
TI Texas Instruments: 1 patents #7,357 of 12,488Top 60%
📍 Topsham, ME: #3 of 25 inventorsTop 15%
🗺 Maine: #453 of 4,281 inventorsTop 15%
Overall (All Time): #575,828 of 4,157,543Top 15%
9
Patents All Time

Issued Patents All Time

Showing 1–9 of 9 patents

Patent #TitleCo-InventorsDate
8673720 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile Prasad Chaparala 2014-03-18
8629027 Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Constantin Bulucea, William French, Sandeep R. Bahl, Jeng-Jiun Yang, Peter Johnson +1 more 2014-01-14
8410549 Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket Constantin Bulucea, Jeng-Jiun Yang, William French, Sandeep R. Bahl 2013-04-02
8377768 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses Constantin Bulucea, William French, Donald M. Archer, Jeng-Jiun Yang, Sandeep R. Bahl 2013-02-19
8304835 Configuration and fabrication of semiconductor structure using empty and filled wells Constantin Bulucea, Sandeep R. Bahl, William French, Jeng-Jiun Yang, Donald M. Archer +1 more 2012-11-06
8253208 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile Prasad Chaparala 2012-08-28
8101479 Fabrication of asymmetric field-effect transistors using L-shaped spacers Donald M. Archer, Sandeep R. Bahl, Constantin Bulucea, William French, Peter Johnson +1 more 2012-01-24
8084827 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses Constantin Bulucea, William French, Donald M. Archer, Jeng-Jiun Yang, Sandeep R. Bahl 2011-12-27
7968921 Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Constantin Bulucea, William French, Sandeep R. Bahl, Jeng-Jiun Yang, Peter Johnson +1 more 2011-06-28