Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8735980 | Configuration and fabrication of semiconductor structure using empty and filled wells | Constantin Bulucea, Sandeep R. Bahl, William French, Donald M. Archer, David C. Parker +1 more | 2014-05-27 |
| 8629027 | Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions | Constantin Bulucea, William French, Sandeep R. Bahl, D. Courtney Parker, Peter Johnson +1 more | 2014-01-14 |
| 8415752 | Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone | Constantin Bulucea, Sandeep R. Bahl | 2013-04-09 |
| 8410549 | Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket | Constantin Bulucea, William French, Sandeep R. Bahl, D. Courtney Parker | 2013-04-02 |
| 8377768 | Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses | Constantin Bulucea, William French, Donald M. Archer, Sandeep R. Bahl, D. Courtney Parker | 2013-02-19 |
| 8304308 | Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length | Constantin Bulucea | 2012-11-06 |
| 8304835 | Configuration and fabrication of semiconductor structure using empty and filled wells | Constantin Bulucea, Sandeep R. Bahl, William French, Donald M. Archer, D. Courtney Parker +1 more | 2012-11-06 |
| 8163619 | Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone | Constantin Bulucea, Sandeep R. Bahl | 2012-04-24 |
| 8101479 | Fabrication of asymmetric field-effect transistors using L-shaped spacers | D. Courtney Parker, Donald M. Archer, Sandeep R. Bahl, Constantin Bulucea, William French +1 more | 2012-01-24 |
| 8084827 | Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses | Constantin Bulucea, William French, Donald M. Archer, Sandeep R. Bahl, D. Courtney Parker | 2011-12-27 |
| 8030151 | Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length | Constantin Bulucea | 2011-10-04 |
| 7968921 | Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions | Constantin Bulucea, William French, Sandeep R. Bahl, D. Courtney Parker, Peter Johnson +1 more | 2011-06-28 |
| 5825068 | Integrated circuits that include a barrier layer reducing hydrogen diffusion into a polysilicon resistor | — | 1998-10-20 |
| 5128731 | Static random access memory cell using a P/N-MOS transistors | Chuen-Der Lien, Fu-Chieh Hsu, Jeong Yeol Choi | 1992-07-07 |