AZ

Ali Zojaji

Applied Materials: 13 patents #1,030 of 7,310Top 15%
Overall (All Time): #380,082 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDate
9890455 Pre-heat ring designs to increase deposition uniformity and substrate throughput Nyi O. Myo, John S. Webb, Masato Ishii, Xuebin Li, Zhiyuan Ye 2018-02-13
8586456 Use of CL2 and/or HCL during silicon epitaxial film formation Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Nicholas C. Dalida, Jinsong Tang +2 more 2013-11-19
8445389 Etchant treatment processes for substrate surfaces and chamber surfaces Arkadii V. Samoilov 2013-05-21
8093154 Etchant treatment processes for substrate surfaces and chamber surfaces Arkadii V. Samoilov 2012-01-10
8029620 Methods of forming carbon-containing silicon epitaxial layers Yihwan Kim, Zhiyuan Ye 2011-10-04
7960256 Use of CL2 and/or HCL during silicon epitaxial film formation Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Nicholas C. Dalida, Jinsong Tang +2 more 2011-06-14
7732269 Method of ultra-shallow junction formation using Si film alloyed with carbon Yihwan Kim, Majeed A. Foad, Yonah Cho, Zhiyuan Ye, Errol Antonio C. Sanchez 2010-06-08
7732305 Use of Cl2 and/or HCl during silicon epitaxial film formation Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Nicholas C. Dalida, Jinsong Tang +2 more 2010-06-08
7682940 Use of Cl2 and/or HCl during silicon epitaxial film formation Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Nicholas C. Dalida, Jinsong Tang +2 more 2010-03-23
7674337 Gas manifolds for use during epitaxial film formation David Masayuki Ishikawa, Craig Metzner, Yihwan Kim, Arkadii V. Samoilov 2010-03-09
7651948 Pre-cleaning of substrates in epitaxy chambers Yihwan Kim, Jean R. Vatus, Lori D. Washington, Arkadii V. Samoilov 2010-01-26
7598178 Carbon precursors for use during silicon epitaxial film formation Arkadii V. Samoilov, Rohini Kodali, Yihwan Kim 2009-10-06
7195934 Method and system for deposition tuning in an epitaxial film growth apparatus Wolfgang Aderhold 2007-03-27