Issued Patents All Time
Showing 51–75 of 119 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9000407 | ReRAM materials stack for low-operating-power and high-density applications | Tony P. Chiang, Dipankar Pramanik | 2015-04-07 |
| 9000819 | Resistive switching schmitt triggers and comparators | Federico Nardi | 2015-04-07 |
| 8995172 | Nonvolatile memory device having a current limiting element | Tony P. Chiang, Imran Hashim | 2015-03-31 |
| 8985172 | Liquid crystal sealant forming device and display panel assembly apparatus using the same | — | 2015-03-24 |
| 8987697 | Transition metal oxide bilayers | Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Takeshi Yamaguchi +1 more | 2015-03-24 |
| 8980766 | Sequential atomic layer deposition of electrodes and resistive switching components | Tony P. Chiang, Tim Minvielle, Takeshi Yamaguchi | 2015-03-17 |
| 8975727 | Memory cell having an integrated two-terminal current limiting resistor | Tony P. Chiang, Imran Hashim, Tim Minvielle, Dipankar Pramanik, Takeshi Yamaguchi | 2015-03-10 |
| 8969844 | Embedded resistors for resistive random access memory cells | — | 2015-03-03 |
| 8963117 | Reduction of forming voltage in semiconductor devices | Pragati Kumar, Tony P. Chiang, Prashant B. Phatak | 2015-02-24 |
| 8913418 | Confined defect profiling within resistive random memory access cells | Vidyut Gopal, Chien-Lan Hsueh | 2014-12-16 |
| 8912524 | Defect gradient to boost nonvolatile memory performance | Tony P. Chiang, Imran Hashim | 2014-12-16 |
| 8906736 | Multifunctional electrode | Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Dipankar Pramanik +2 more | 2014-12-09 |
| 8901530 | Nonvolatile memory device using a tunnel oxide as a passive current steering element | Mihir Tendulkar, Imran Hashim | 2014-12-02 |
| 8895949 | Nonvolatile memory device using a varistor as a current limiter element | Mihir Tendulkar, Imran Hashim | 2014-11-25 |
| 8890109 | Resistive random access memory access cells having thermally isolating structures | Tony P. Chiang, Tim Minvielle, Takeshi Yamaguchi | 2014-11-18 |
| 8883655 | Atomic layer deposition of metal oxide materials for memory applications | Tony P. Chiang, Vidyut Gopal, Imran Hashim, Dipankar Pramanik | 2014-11-11 |
| 8878152 | Nonvolatile resistive memory element with an integrated oxygen isolation structure | Tony P. Chiang, Imran Hashim, Dipankar Pramanik | 2014-11-04 |
| 8872152 | IL-free MIM stack for clean RRAM devices | Federico Nardi | 2014-10-28 |
| 8871564 | Diffusion barrier layer for resistive random access memory cells | Imran Hashim | 2014-10-28 |
| 8866121 | Current-limiting layer and a current-reducing layer in a memory device | Tony P. Chiang, Imran Hashim | 2014-10-21 |
| 8866118 | Morphology control of ultra-thin MeOx layer | Federico Nardi | 2014-10-21 |
| 8860002 | Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells | Mihir Tendulkar, Imran Hashim, Tim Minvielle, Takeshi Yamaguchi | 2014-10-14 |
| 8859328 | Multifunctional electrode | Hieu Pham, Vidyut Gopal, Imran Hashim, Tim Minvielle, Dipankar Pramanik +2 more | 2014-10-14 |
| 8852996 | Carbon doped resistive switching layers | Tony P. Chiang, Tim Minvielle, Takeshi Yamaguchi | 2014-10-07 |
| 8853099 | Nonvolatile resistive memory element with a metal nitride containing switching layer | Tony P. Chiang, Imran Hashim, Tim Minvielle, Takeshi Yamaguchi | 2014-10-07 |