Issued Patents All Time
Showing 101–125 of 134 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7435683 | Apparatus and method for selectively recessing spacers on multi-gate devices | Jack T. Kavalieros, Willy Rachmady, Brian S. Doyle | 2008-10-14 |
| 7425490 | Reducing reactions between polysilicon gate electrodes and high dielectric constant gate dielectrics | Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz, Suman Datta +1 more | 2008-09-16 |
| 7414290 | Double gate transistor, method of manufacturing same, and system containing same | Ibrahim Ban | 2008-08-19 |
| 7407847 | Stacked multi-gate transistor design and method of fabrication | Brian S. Doyle, Titash Rakshit, Robert S. Chau, Suman Datta, Justin K. Brask | 2008-08-05 |
| 7396711 | Method of fabricating a multi-cornered film | Brian S. Doyle, Justin K. Brask, Robert S. Chau | 2008-07-08 |
| 7390709 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz, Suman Datta +2 more | 2008-06-24 |
| 7390947 | Forming field effect transistors from conductors | Amlan Majumdar, Justin K. Brask, Marko Radosavljevic, Suman Datta, Brian S. Doyle +5 more | 2008-06-24 |
| 7387927 | Reducing oxidation under a high K gate dielectric | Robert Turkot, Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz +2 more | 2008-06-17 |
| 7361958 | Nonplanar transistors with metal gate electrodes | Justin K. Brask, Brian S. Doyle, Jack T. Kavalieros, Mark L. Doczy, Robert S. Chau | 2008-04-22 |
| 7355281 | Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Chris Barns, Matthew V. Metz +3 more | 2008-04-08 |
| 7354832 | Tri-gate device with conformal PVD workfunction metal on its three-dimensional body and fabrication method thereof | Willy Rachmady, Brian S. Doyle, Jack T. Kavalieros | 2008-04-08 |
| 7326656 | Method of forming a metal oxide dielectric | Justin K. Brask, Brian S. Doyle, Jack Kavalleros, Mark L. Doczy, Robert S. Chau | 2008-02-05 |
| 7323423 | Forming high-k dielectric layers on smooth substrates | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Suman Datta +2 more | 2008-01-29 |
| 7279375 | Block contact architectures for nanoscale channel transistors | Marko Radosavljevic, Amlan Majumdar, Brian S. Doyle, Jack T. Kavalieros, Mark L. Doczy +3 more | 2007-10-09 |
| 7220635 | Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz, Chris Barns +3 more | 2007-05-22 |
| 7208361 | Replacement gate process for making a semiconductor device that includes a metal gate electrode | Chris Barns, Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz +1 more | 2007-04-24 |
| 7183184 | Method for making a semiconductor device that includes a metal gate electrode | Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Chris Barns, Robert S. Chau | 2007-02-27 |
| 7176090 | Method for making a semiconductor device that includes a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Suman Datta +2 more | 2007-02-13 |
| 7160767 | Method for making a semiconductor device that includes a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Robert S. Chau | 2007-01-09 |
| 7157378 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Justin K. Brask, Chris Barns, Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz +3 more | 2007-01-02 |
| 7153734 | CMOS device with metal and silicide gate electrodes and a method for making it | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz, Chris Barns +3 more | 2006-12-26 |
| 7153784 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Chris Barns, Matthew V. Metz +3 more | 2006-12-26 |
| 7138323 | Planarizing a semiconductor structure to form replacement metal gates | Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Chris Barns, Matthew V. Metz +2 more | 2006-11-21 |
| 7129182 | Method for etching a thin metal layer | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz, Robert S. Chau +1 more | 2006-10-31 |
| 7125762 | Compensating the workfunction of a metal gate transistor for abstraction by the gate dielectric layer | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Suman Datta +1 more | 2006-10-24 |