Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7888710 | CMOS fabrication process utilizing special transistor orientation | Mark Armstrong, Gerhard Schrom, Sunit Tyagi, Paul Packan, Kelin J. Kuhn | 2011-02-15 |
| 7723720 | Methods and articles incorporating local stress for performance improvement of strained semiconductor devices | Toshikazu Nishida, Al Ogden, Kehuey Wu | 2010-05-25 |
| 7312485 | CMOS fabrication process utilizing special transistor orientation | Mark Armstrong, Gerhard Schrom, Sunit Tyagi, Paul Packan, Kelin J. Kuhn | 2007-12-25 |
| 7226824 | Nitrogen controlled growth of dislocation loop in stress enhanced transistor | Cory E. Weber, Mark Armstrong, Harold W. Kennel, Tahir Ghani, Paul Packan | 2007-06-05 |
| 7187057 | Nitrogen controlled growth of dislocation loop in stress enhanced transistor | Cory E. Weber, Mark Armstrong, Harold W. Kennel, Tahir Ghani, Paul Packan | 2007-03-06 |
| 6800887 | Nitrogen controlled growth of dislocation loop in stress enhanced transistor | Cory E. Weber, Mark Armstrong, Harold W. Kennel, Tahir Ghani, Paul Packan | 2004-10-05 |
| 6624032 | Structure and process flow for fabrication of dual gate floating body integrated MOS transistors | Mohsen Alavi, Ebrahim Andideh, Mark Bohr | 2003-09-23 |
| 6515351 | Integrated circuit with borderless contacts | Mohamed Arafa | 2003-02-04 |
| 6392271 | Structure and process flow for fabrication of dual gate floating body integrated MOS transistors | Mohsen Alavi, Ebrahim Andideh, Mark Bohr | 2002-05-21 |
| 6294823 | Integrated circuit with insulating spacers separating borderless contacts from the well | Mohamed Arafa | 2001-09-25 |
| 6228777 | Integrated circuit with borderless contacts | Mohamed Arafa | 2001-05-08 |
| 6020244 | Channel dopant implantation with automatic compensation for variations in critical dimension | Paul Packan, Tahir Ghani, Mark Stettler, Shahriar Ahmed, Mark Bohr | 2000-02-01 |
| 5976939 | Low damage doping technique for self-aligned source and drain regions | Mark Bohr, Paul Packan | 1999-11-02 |
| 5877072 | Process for forming doped regions from solid phase diffusion source | Ebrahim Andideh | 1999-03-02 |
| 5874344 | Two step source/drain anneal to prevent dopant evaporation | Chai-Hong Jan | 1999-02-23 |