ST

Scott Thompson

IN Intel: 14 patents #2,910 of 30,777Top 10%
University of Florida: 1 patents #1,174 of 2,560Top 50%
Overall (All Time): #325,503 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
7888710 CMOS fabrication process utilizing special transistor orientation Mark Armstrong, Gerhard Schrom, Sunit Tyagi, Paul Packan, Kelin J. Kuhn 2011-02-15
7723720 Methods and articles incorporating local stress for performance improvement of strained semiconductor devices Toshikazu Nishida, Al Ogden, Kehuey Wu 2010-05-25
7312485 CMOS fabrication process utilizing special transistor orientation Mark Armstrong, Gerhard Schrom, Sunit Tyagi, Paul Packan, Kelin J. Kuhn 2007-12-25
7226824 Nitrogen controlled growth of dislocation loop in stress enhanced transistor Cory E. Weber, Mark Armstrong, Harold W. Kennel, Tahir Ghani, Paul Packan 2007-06-05
7187057 Nitrogen controlled growth of dislocation loop in stress enhanced transistor Cory E. Weber, Mark Armstrong, Harold W. Kennel, Tahir Ghani, Paul Packan 2007-03-06
6800887 Nitrogen controlled growth of dislocation loop in stress enhanced transistor Cory E. Weber, Mark Armstrong, Harold W. Kennel, Tahir Ghani, Paul Packan 2004-10-05
6624032 Structure and process flow for fabrication of dual gate floating body integrated MOS transistors Mohsen Alavi, Ebrahim Andideh, Mark Bohr 2003-09-23
6515351 Integrated circuit with borderless contacts Mohamed Arafa 2003-02-04
6392271 Structure and process flow for fabrication of dual gate floating body integrated MOS transistors Mohsen Alavi, Ebrahim Andideh, Mark Bohr 2002-05-21
6294823 Integrated circuit with insulating spacers separating borderless contacts from the well Mohamed Arafa 2001-09-25
6228777 Integrated circuit with borderless contacts Mohamed Arafa 2001-05-08
6020244 Channel dopant implantation with automatic compensation for variations in critical dimension Paul Packan, Tahir Ghani, Mark Stettler, Shahriar Ahmed, Mark Bohr 2000-02-01
5976939 Low damage doping technique for self-aligned source and drain regions Mark Bohr, Paul Packan 1999-11-02
5877072 Process for forming doped regions from solid phase diffusion source Ebrahim Andideh 1999-03-02
5874344 Two step source/drain anneal to prevent dopant evaporation Chai-Hong Jan 1999-02-23