Issued Patents All Time
Showing 26–50 of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10923578 | Semiconductor device comprising a barrier region | Caspar Leendertz, Markus Bina, Alice Pei-Shan Hsieh, Christian Philipp Sandow | 2021-02-16 |
| 10903344 | Semiconductor device with separation regions | Roman Baburske, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2021-01-26 |
| 10854739 | Method for producing IGBT with dV/dt controllability | Antonio Vellei, Markus Beninger-Bina, Christian Jaeger, Johannes Georg Laven, Alexander Philippou +1 more | 2020-12-01 |
| 10840362 | IGBT with dV/dt controllability | Alexander Philippou, Markus Bina, Christian Jaeger, Johannes Georg Laven, Francisco Javier Santos Rodriguez +3 more | 2020-11-17 |
| 10825716 | Method for manufacturing a semiconductor device | Andreas Moser, Matthias Kuenle, Hans-Joachim Schulze | 2020-11-03 |
| 10825906 | Semiconductor device with transistor cells and enhancement cells with delayed control signals | Johannes Georg Laven, Roman Baburske, Christian Jaeger | 2020-11-03 |
| 10790384 | Power semiconductor device having overvoltage protection | Markus Beninger-Bina, Thomas Basler, Hans-Joachim Schulze | 2020-09-29 |
| 10615272 | Method for producing IGBT with dV/dt controllability | Antonio Vellei, Markus Bina, Christian Jaeger, Johannes Georg Laven, Alexander Philippou +1 more | 2020-04-07 |
| 10410911 | Buried insulator regions and methods of formation thereof | Carsten Schaeffer, Andreas Moser, Matthias Kuenle, Roland Rupp, Hans-Joachim Schulze | 2019-09-10 |
| 10381467 | Semiconductor device with separation regions | Roman Baburske, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2019-08-13 |
| 10355116 | Power semiconductor device | Markus Bina, Thomas Basler, Hans-Joachim Schulze | 2019-07-16 |
| 10312258 | Semiconductor device with buried cavities and dielectric support structures | Johannes Georg Laven, Hans-Joachim Schulze | 2019-06-04 |
| 10304952 | Power semiconductor device with dV/dt controllability and cross-trench arrangement | Alexander Philippou, Markus Bina, Ingo Dirnstorfer, Erich Griebl, Christian Jaeger +3 more | 2019-05-28 |
| 10276708 | Reverse-blocking IGBT having a reverse-blocking edge termination structure | Fabio Brucchi | 2019-04-30 |
| 10217837 | Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures | Roman Baburske, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2019-02-26 |
| 10177248 | Semiconductor device | Erich Griebl | 2019-01-08 |
| 9997602 | Semiconductor device with transistor cells and enhancement cells with delayed control signals | Johannes Georg Laven, Roman Baburske, Christian Jaeger | 2018-06-12 |
| 9935126 | Method of forming a semiconductor substrate with buried cavities and dielectric support structures | Johannes Georg Laven, Hans-Joachim Schulze | 2018-04-03 |
| 9917186 | Semiconductor device with control structure including buried portions and method of manufacturing | Johannes Georg Laven, Hans-Joachim Schulze, Peter Lechner, Roman Baburske | 2018-03-13 |
| 9876100 | Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones | Roman Baburske, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2018-01-23 |
| 9837506 | Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures | Roman Baburske, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2017-12-05 |
| 9741570 | Method of manufacturing a reverse-blocking IGBT | Fabio Brucchi | 2017-08-22 |
| 9666665 | Semiconductor device with semiconductor mesa including a constriction | Johannes Georg Laven, Roman Baburske, Peter Lechner | 2017-05-30 |
| 9570577 | Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas | Roman Baburske, Peter Lechner, Hans-Joachim Schulze, Johannes Georg Laven | 2017-02-14 |
| 9543398 | Semiconductor switching device including charge storage structure | Johannes Georg Laven, Anton Mauder, Franz Hirler, Christian Jaeger, Maximilian Roesch +3 more | 2017-01-10 |