Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11583856 | Bio-information detection substrate and gene chip | Shenkang Wu, Dongsheng Huang, Tingze Dong, Jianxing Shang, Yizhe Li +9 more | 2023-02-21 |
| 7131102 | Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era | Chung-Hsing Chang, Jan-Wen You, Burn Jeng Lin | 2006-10-31 |
| 7036108 | Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era | Chung-Hsing Chang, Jan-Wen You, Burn Jeng Lin | 2006-04-25 |
| 7013453 | Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution ERA | Chung-Hsing Chang, Jan-Wen You, Burn Jeng Lin | 2006-03-14 |
| 6830702 | Single trench alternating phase shift mask fabrication | San-De Tzu, Chung-Hsing Chang, Chen-Hao Hsieh | 2004-12-14 |
| 6711732 | Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era | Chung-Hsing Chang, Jan-Wen You, Burn Jeng Lin | 2004-03-23 |
| 6660653 | Dual trench alternating phase shift mask fabrication | San-De Tzu, Ching-Hsing Chang | 2003-12-09 |
| 6319568 | Formation of silicon nitride film for a phase shift mask at 193 nm | Lon Wang, H. L. Chen | 2001-11-20 |
| 6291118 | Elimination of proximity effect in photoresist | Tsai-Sheng Gau | 2001-09-18 |
| 6180512 | Single-mask dual damascene processes by using phase-shifting mask | — | 2001-01-30 |
| 6174781 | Dual damascene process for capacitance fabrication of DRAM | Meng-Jaw Cherng | 2001-01-16 |
| 6045954 | Formation of silicon nitride film for a phase shift mask at 193 nm | Lon Wang, H. L. Chen | 2000-04-04 |
| 6040119 | Elimination of proximity effect in photoresist | Tsai-Sheng Gau | 2000-03-21 |
| 5976968 | Single-mask dual damascene processes by using phase-shifting mask | — | 1999-11-02 |
| 5935762 | Two-layered TSI process for dual damascene patterning | Jammy Chin-Ming Huang | 1999-08-10 |
| 5916717 | Process utilizing relationship between reflectivity and resist thickness for inhibition of side effect caused by halftone phase shift masks | Chuen-Huei Yang | 1999-06-29 |
| 5882996 | Method of self-aligned dual damascene patterning using developer soluble arc interstitial layer | — | 1999-03-16 |
| 5877076 | Opposed two-layered photoresist process for dual damascene patterning | — | 1999-03-02 |
| 5877075 | Dual damascene process using single photoresist process | Jammy Chin-Ming Huang | 1999-03-02 |
| 5710076 | Method for fabricating a sub-half micron MOSFET device with global planarization of insulator filled shallow trenches, via the use of a bottom anti-reflective coating | Horng-Chang Dai, Chin-Lung Lin | 1998-01-20 |
| 5691215 | Method for fabricating a sub-half micron MOSFET device with insulator filled shallow trenches planarized via use of negative photoresist and de-focus exposure | Hong Dai, Shih-Chang TAI | 1997-11-25 |
| 5670281 | Masks and methods of forming masks which avoid phase conflict problems in phase shifting masks | — | 1997-09-23 |
| 5670404 | Method for making self-aligned bit line contacts on a DRAM circuit having a planarized insulating layer | — | 1997-09-23 |
| 5604157 | Reduced notching of polycide gates using silicon anti reflection layer | Jau-Hwang Ho, Lou G. Chine | 1997-02-18 |