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Horng-Chang Dai

IT ITRI: 1 patents #5,197 of 9,619Top 55%
Overall (All Time): #3,674,370 of 4,157,543Top 90%
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Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
5710076 Method for fabricating a sub-half micron MOSFET device with global planarization of insulator filled shallow trenches, via the use of a bottom anti-reflective coating Chang-Ming Dai, Chin-Lung Lin 1998-01-20