Issued Patents All Time
Showing 26–44 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9536731 | Wet clean process for removing CxHyFz etch residue | Robert L. Bruce, Eric A. Joseph, Mahmoud Khojasteh, Masahiro Nakamura, Satyavolu S. Papa Rao +3 more | 2017-01-03 |
| 9490164 | Techniques for forming contacts for active BEOL | Steve Holmes, Qinghuang Lin, Nathan P. Marchack, Eugene J. O'Sullivan | 2016-11-08 |
| 9437443 | Low-temperature sidewall image transfer process using ALD metals, metal oxides and metal nitrides | Markus Brink, Michael A. Guillorn, Hiroyuki Miyazoe, Adam M. Pyzyna, Jeffrey W. Sleight | 2016-09-06 |
| 9299639 | Patterning transition metals in integrated circuits | Cyril Cabral, Jr., Benjamin L. Fletcher, Michael S. Gordon, Eric A. Joseph | 2016-03-29 |
| 9299638 | Patterning transition metals in integrated circuits | Cyril Cabral, Jr., Benjamin L. Fletcher, Michael S. Gordon, Eric A. Joseph | 2016-03-29 |
| 9214355 | Molecular radical etch chemistry for increased throughput in pulsed plasma applications | Nathan P. Marchack, Masahiro Nakamura | 2015-12-15 |
| 9190316 | Low energy etch process for nitrogen-containing dielectric layer | Markus Brink, Robert L. Bruce, Nicholas C. M. Fuller, Hiroyuki Miyazoe, Masahiro Nakamura | 2015-11-17 |
| 9162877 | Lateral etch stop for NEMS release etch for high density NEMS/CMOS monolithic integration | Josephine B. Chang, Leland Chang, Michael A. Guillorn | 2015-10-20 |
| 9018090 | Borderless self-aligned metal contact patterning using printable dielectric materials | Josephine B. Chang, Nicholas C. M. Fuller, Michael A. Guillorn, Eric A. Joseph, Adam M. Pyzyna | 2015-04-28 |
| 9000556 | Lateral etch stop for NEMS release etch for high density NEMS/CMOS monolithic integration | Josephine B. Chang, Leland Chang, Michael A. Guillorn | 2015-04-07 |
| 8916054 | High fidelity patterning employing a fluorohydrocarbon-containing polymer | Markus Brink, Nicholas C. M. Fuller, Michael A. Guillorn, Hiroyuki Miyazoe, Masahiro Nakamura | 2014-12-23 |
| 8829625 | Nanowire FET with trapezoid gate structure | Jeffrey W. Sleight, Sarunya Bangsaruntip, Ying Zhang | 2014-09-09 |
| 8765613 | High selectivity nitride etch process | Josephine B. Chang, Nicholas C. M. Fuller, Michael A. Guillorn, Masahiro Nakamura | 2014-07-01 |
| 8658050 | Method to transfer lithographic patterns into inorganic substrates | Martin Glodde, Michael A. Guillorn | 2014-02-25 |
| 8445948 | Gate patterning of nano-channel devices | Nicholas C. M. Fuller, Sarunya Bangsaruntip, Guy M. Cohen, Lidija Sekaric, Qingyun Yang +1 more | 2013-05-21 |
| 8431486 | Interconnect structure for improved time dependent dielectric breakdown | Cyril Cabral, Jr., Benjamin L. Fletcher, Eric A. Joseph, Satyanarayana V. Nitta | 2013-04-30 |
| 8298881 | Nanowire FET with trapezoid gate structure | Jeffrey W. Sleight, Sarunya Bangsaruntip, Ying Zhang | 2012-10-30 |
| 8232171 | Structure with isotropic silicon recess profile in nanoscale dimensions | Nicholas C. M. Fuller, Eric A. Joseph, Isaac Lauer, Ryan M. Martin, James Vichiconti +1 more | 2012-07-31 |
| 7816275 | Gate patterning of nano-channel devices | Nicholas C. M. Fuller, Sarunya Bangsaruntip, Guy M. Cohen, Lidija Sekaric, Qingyun Yang +1 more | 2010-10-19 |