Issued Patents All Time
Showing 51–75 of 105 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9287362 | Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts | Anirban Basu, Cheng-Wei Cheng, Wilfried E. Haensch, Amlan Majumdar | 2016-03-15 |
| 9287115 | Planar III-V field effect transistor (FET) on dielectric layer | Cheng-Wei Cheng, Edward W. Kiewra, Amlan Majumdar, Uzma Rana, Devendra K. Sadana +1 more | 2016-03-15 |
| 9263626 | Crystalline thin film photovoltaic cell | Cheng-Wei Cheng, Ning Li, Devendra K. Sadana | 2016-02-16 |
| 9236251 | Heterogeneous integration of group III nitride on silicon for advanced integrated circuits | Can Bayram, Cheng-Wei Cheng, Tak H. Ning, Devendra K. Sadana | 2016-01-12 |
| 9231133 | Nanowires formed by employing solder nanodots | Keith E. Fogel, Jeehwan Kim, Jae-Woong Nah, Devendra K. Sadana | 2016-01-05 |
| 9159822 | III-V semiconductor device having self-aligned contacts | Anirban Basu, Amlan Majumdar, Yanning Sun | 2015-10-13 |
| 9123569 | Complementary metal-oxide-semiconductor structure with III-V and silicon germanium transistors on insulator | Cheng-Wei Cheng, Amlan Majumdar | 2015-09-01 |
| 9105571 | Interface engineering to optimize metal-III-V contacts | Christian Lavoie, Uzma Rana, Devendra K. Sadana, Paul M. Solomon, Yanning Sun +1 more | 2015-08-11 |
| 9099381 | Selective gallium nitride regrowth on (100) silicon | Can Bayram, Cheng-Wei Cheng, Devendra K. Sadana | 2015-08-04 |
| 9093532 | Overlapped III-V finFET with doped semiconductor extensions | Cheng-Wei Cheng, Effendi Leobandung, Yanning Sun | 2015-07-28 |
| 9087775 | Planar semiconductor growth on III-V material | Cheng-Wei Cheng, Jack O. Chu, Devendra K. Sadana, Yanning Sun | 2015-07-21 |
| 9087905 | Transistor formation using cold welding | Cheng-Wei Cheng, Shu-Jen Han, Masaharu Kobayashi, Ko-Tao Lee, Devendra K. Sadana | 2015-07-21 |
| 9082689 | High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate | Cheng-Wei Cheng, Ning Li | 2015-07-14 |
| 9082690 | High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate | Cheng-Wei Cheng, Ning Li | 2015-07-14 |
| 9070617 | Reduced S/D contact resistance of III-V mosfet using low temperature metal-induced crystallization of n+ Ge | Jeehwan Kim, Jin Hong Park, Devendra K. Sadana | 2015-06-30 |
| 9059232 | T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulator | Cheng-Wei Cheng, Tak H. Ning, Ghavam G. Shahidi | 2015-06-16 |
| 9059271 | Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation | Dechao Guo, Shu-Jen Han, Jeehwan Kim | 2015-06-16 |
| 9059073 | Method for controlled removal of a semiconductor device layer from a base substrate | Stephen W. Bedell, Cheng-Wei Cheng, Devendra K. Sadana, Norma E. Sosa Cortes | 2015-06-16 |
| 9059288 | Overlapped III-V finfet with doped semiconductor extensions | Cheng-Wei Cheng, Effendi Leobandung, Yanning Sun | 2015-06-16 |
| 9059272 | Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation | Dechao Guo, Shu-Jen Han, Jeehwan Kim | 2015-06-16 |
| 9059075 | Selective gallium nitride regrowth on (100) silicon | Can Bayram, Cheng-Wei Cheng, Devendra K. Sadana | 2015-06-16 |
| 9059231 | T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulator | Cheng-Wei Cheng, Tak H. Ning, Ghavam G. Shahidi | 2015-06-16 |
| 9053930 | Heterogeneous integration of group III nitride on silicon for advanced integrated circuits | Can Bayram, Cheng-Wei Cheng, Tak H. Ning, Devendra K. Sadana | 2015-06-09 |
| 9048173 | Dual phase gallium nitride material formation on (100) silicon | Can Bayram, Cheng-Wei Cheng, Devendra K. Sadana | 2015-06-02 |
| 9040392 | Method for controlled removal of a semiconductor device layer from a base substrate | Stephen W. Bedell, Cheng-Wei Cheng, Devendra K. Sadana, Norma E. Sosa Cortes | 2015-05-26 |