Issued Patents All Time
Showing 176–190 of 190 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8258031 | Fabrication of a vertical heterojunction tunnel-FET | Amlan Majumdar, Paul M. Solomon, Steven J. Koester | 2012-09-04 |
| 8247877 | Structure with reduced fringe capacitance | Leland Chang, Renee T. Mo, Jeffrey W. Sleight | 2012-08-21 |
| 8232171 | Structure with isotropic silicon recess profile in nanoscale dimensions | Sebastian U. Engelmann, Nicholas C. M. Fuller, Eric A. Joseph, Ryan M. Martin, James Vichiconti +1 more | 2012-07-31 |
| 8232604 | Transistor with high-k dielectric sidewall spacer | Leland Chang, Jeffrey W. Sleight | 2012-07-31 |
| 8216907 | Process to fabricate a metal high-K transistor having first and second silicon sidewalls for reduced parasitic capacitance | Leland Chang, Jeffrey W. Sleight, Renee T. Mo | 2012-07-10 |
| 8178400 | Replacement spacer for tunnel FETs | Josephine B. Chang, Michael A. Guillorn, Amlan Majumdar | 2012-05-15 |
| 8174074 | Asymmetric embedded silicon germanium field effect transistor | Chung-Hsun Lin, Jeffrey W. Sleight | 2012-05-08 |
| 8173993 | Gate-all-around nanowire tunnel field effect transistors | Sarunya Bangsaruntip, Josephine B. Chang, Jeffrey W. Sleight | 2012-05-08 |
| 8159028 | Metal high dielectric constant transistor with reverse-T gate | Leland Chang, Jeffrey W. Sleight | 2012-04-17 |
| 8143113 | Omega shaped nanowire tunnel field effect transistors fabrication | Sarunya Bangsaruntip, Josephine B. Chang, Jeffrey W. Sleight | 2012-03-27 |
| 8138052 | Metal high dielectric constant transistor with reverse-T gate | Leland Chang, Jeffrey W. Sleight | 2012-03-20 |
| 7855135 | Method to reduce parastic capacitance in a metal high dielectric constant (MHK) transistor | Leland Chang, Renee T. Mo, Jeffrey W. Sleight | 2010-12-21 |
| 7843007 | Metal high-k transistor having silicon sidewall for reduced parasitic capacitance | Leland Chang, Renee T. Mo, Jeffrey W. Sleight | 2010-11-30 |
| 7776732 | Metal high-K transistor having silicon sidewall for reduced parasitic capacitance, and process to fabricate same | Leland Chang, Renee T. Mo, Jeffrey W. Sleight | 2010-08-17 |
| 7736981 | Metal high dielectric constant transistor with reverse-T gate | Leland Chang, Jeffrey W. Sleight | 2010-06-15 |