GC

Guy M. Cohen

IBM: 258 patents #102 of 70,183Top 1%
SI Simplehuman: 22 patents #11 of 60Top 20%
SS Saifun Semiconductors: 10 patents #6 of 35Top 20%
Globalfoundries: 9 patents #393 of 4,424Top 9%
KL Kla-Tencor: 8 patents #185 of 1,394Top 15%
NO Novelsat: 3 patents #2 of 10Top 20%
KT King Abdulaziz City For Science And Technology: 3 patents #78 of 573Top 15%
RU Ramot At Tel-Aviv University: 2 patents #229 of 1,095Top 25%
KL Kla: 2 patents #202 of 758Top 30%
Applied Materials: 1 patents #4,780 of 7,310Top 70%
SI Spansion Israel: 1 patents #12 of 24Top 50%
ET Elpis Technologies: 1 patents #31 of 121Top 30%
📍 Ossining, NY: #2 of 613 inventorsTop 1%
🗺 New York: #51 of 115,490 inventorsTop 1%
Overall (All Time): #1,097 of 4,157,543Top 1%
320
Patents All Time

Issued Patents All Time

Showing 176–200 of 320 patents

Patent #TitleCo-InventorsDate
8921825 Nanowire field effect transistor device Sarunya Bangsaruntip, Jeffrey W. Sleight 2014-12-30
8872274 Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain David J. Frank, Isaac Lauer 2014-10-28
8835231 Methods of forming contacts for nanowire field effect transistors Sarunya Bangsaruntip, Shreesh Narasimha, Jeffrey W. Sleight 2014-09-16
8828785 Single-crystal phase change material on insulator for reduced cell variability Simone Raoux 2014-09-09
8772755 Directionally etched nanowire field effect transistors Sarunya Bangsaruntip, Jeffrey W. Sleight 2014-07-08
8730865 Front-end for satellite communication Daniel Wajcer 2014-05-20
8722470 CMOS with channel p-FinFET and channel n-FinFET having different crystalline orientations and parallel fins Katherine L. Saenger 2014-05-13
8723233 CMOS with channel P-FinFET and channel N-FinFET having different crystalline orientations and parallel fins Katherine L. Saenger 2014-05-13
8716091 Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain David J. Frank, Isaac Lauer 2014-05-06
8716695 Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process Michael A. Guillorn, Conal E. Murray 2014-05-06
8692229 Replacement contacts for all-around contacts Michael A. Guillorn 2014-04-08
8685823 Nanowire field effect transistor device Sarunya Bangsaruntip, Jeffrey W. Sleight 2014-04-01
8680510 Method of forming compound semiconductor Sarunya Bangsaruntip, Mikael T. Bjoerk, Heike E. Riel, Heinz Schmid 2014-03-25
8680589 Omega shaped nanowire field effect transistors Sarunya Bangsaruntip, Josephine B. Chang, Jeffrey W. Sleight 2014-03-25
8681409 Nonvolatile nano-electromechanical system device David J. Frank 2014-03-25
8683611 High resolution AFM tips containing an aluminum-doped semiconductor nanowire Mark C. Reuter, Brent A. Wacaser, Maha M. Khayyat 2014-03-25
8673698 Generation of multiple diameter nanowire field effect transistors Sarunya Bangsaruntip, Jeffrey W. Sleight 2014-03-18
8658488 Method for forming semiconductor chip with graphene based devices in an interconnect structure of the chip Christos D. Dimitrakopoulos, Stephen M. Gates, Alfred Grill, Timothy J. McArdle, Chun-Yung Sung 2014-02-25
8659093 Continuous metal semiconductor alloy via for interconnects Christos D. Dimitrakopoulos, Alfred Grill 2014-02-25
8648330 Nanowire field effect transistors Sarunya Bangsaruntip, Amlan Majumdar, Jeffrey W. Sleight 2014-02-11
8642403 Replacement contacts for all-around contacts Michael A. Guillorn 2014-02-04
8644866 Satellite receiver with interfering signal cancellation Daniel Wajcer 2014-02-04
8642996 Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates Christos D. Dimitrakopoulos, Alfred Grill 2014-02-04
8614434 MOSFET with a nanowire channel and fully silicided (FUSI) wrapped around gate Sarunya Bangsaruntip 2013-12-24
8586966 Contacts for nanowire field effect transistors Sarunya Bangsaruntip, Shreesh Narasimha, Jeffrey W. Sleight 2013-11-19