Issued Patents All Time
Showing 276–300 of 377 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8587086 | Self-aligned dual depth isolation and method of fabrication | Kangguo Cheng, Robert H. Dennard, Bruce B. Doris, Ali Khakifirooz | 2013-11-19 |
| 8574970 | Method of forming an extremely thin semiconductor insulator (ETSOI) FET having a stair-shaped raised source/drain | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2013-11-05 |
| 8552487 | SOI trench DRAM structure with backside strap | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2013-10-08 |
| 8546228 | Strained thin body CMOS device having vertically raised source/drain stressors with single spacer | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2013-10-01 |
| 8536032 | Formation of embedded stressor through ion implantation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2013-09-17 |
| 8530337 | Method of large-area circuit layout recognition | Stephen W. Bedell, Bahman Hekmatshoartabari, Ali Khakifirooz, John A. Ott, Davood Shahrjerdi | 2013-09-10 |
| 8518807 | Radiation hardened SOI structure and method of making same | Stephen W. Bedell, Bahman Hekmatshoartabari, Ali Khakifirooz, Davood Shahrjerdi | 2013-08-27 |
| 8513723 | Method and structure for forming high performance MOS capacitor along with fully depleted semiconductor on insulator devices on the same chip | Roger A. Booth, Jr., Kangguo Cheng, Bruce B. Doris | 2013-08-20 |
| 8513765 | Formation method and structure for a well-controlled metallic source/drain semiconductor device | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2013-08-20 |
| 8502347 | Bipolar junction transistor with epitaxial contacts | Bahman Hekmatshoartabari, Tak H. Ning, Devendra K. Sadana, Davood Shahrjerdi | 2013-08-06 |
| 8492839 | Same-chip multicharacteristic semiconductor structures | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2013-07-23 |
| 8486797 | Bipolar junction transistor with epitaxial contacts | Bahman Hekmatshoartabari, Tak H. Ning, Devendra K. Sadana, Davood Shahrjerdi | 2013-07-16 |
| 8482078 | Integrated circuit diode | Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni | 2013-07-09 |
| 8455308 | Fully-depleted SON | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni | 2013-06-04 |
| 8404540 | Device and method of reducing junction leakage | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2013-03-26 |
| 8399957 | Dual-depth self-aligned isolation structure for a back gate electrode | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz | 2013-03-19 |
| 8399938 | Stressed Fin-FET devices with low contact resistance | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2013-03-19 |
| 8394710 | Semiconductor devices fabricated by doped material layer as dopant source | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran, Ali Khakifirooz | 2013-03-12 |
| 8383474 | Thin channel device and fabrication method with a reverse embedded stressor | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2013-02-26 |
| 8368053 | Multilayer-interconnection first integration scheme for graphene and carbon nanotube transistor based integration | Zihong Liu | 2013-02-05 |
| 8361889 | Strained semiconductor-on-insulator by addition and removal of atoms in a semiconductor-on-insulator | Thomas N. Adam, Stephen W. Bedell, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek +1 more | 2013-01-29 |
| 8349684 | Semiconductor device with high K dielectric control terminal spacer structure | Jin Cai, Amlan Majumdar, Ramachandran Muralidhar | 2013-01-08 |
| 8343819 | Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz | 2013-01-01 |
| 8338260 | Raised source/drain structure for enhanced strain coupling from stress liner | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2012-12-25 |
| 8318568 | Tunnel field effect transistor | Bruce B. Doris, Kangguo Cheng, Wilfried E. Haensch, Ali Khakifirooz, Isaac Lauer | 2012-11-27 |