Issued Patents All Time
Showing 26–32 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10043893 | Post gate silicon germanium channel condensation and method for producing the same | Ryan Sporer, Timothy J. McArdle, Judson R. Holt | 2018-08-07 |
| 10020307 | Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same | Judson R. Holt, Christopher D. Sheraw, Timothy J. McArdle, Matthew W. Stoker, Mira Park +1 more | 2018-07-10 |
| 10008576 | Epi facet height uniformity improvement for FDSOI technologies | Xusheng Wu | 2018-06-26 |
| 9917103 | Diffusion break forming after source/drain forming and related IC structure | Jin Z. Wallner | 2018-03-13 |
| 9812453 | Self-aligned sacrificial epitaxial capping for trench silicide | Lakshmanan H. Vanamurthy, Scott Beasor, Timothy J. McArdle, Judson R. Holt, Hao Zhang | 2017-11-07 |
| 9806170 | Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI | Ryan Sporer, Rick Carter, Peter Baars, Hans-Jürgen Thees, Jan Höntschel | 2017-10-31 |
| 9704971 | Epi facet height uniformity improvement for FDSOI technologies | Xusheng Wu | 2017-07-11 |