Issued Patents All Time
Showing 51–75 of 96 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6849874 | Minimizing degradation of SiC bipolar semiconductor devices | Joseph Sumakeris, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more | 2005-02-01 |
| 6844236 | Method and structure for DC and RF shielding of integrated circuits | Tony Ivanov, Michael Carroll | 2005-01-18 |
| 6673662 | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same | — | 2004-01-06 |
| 6661705 | Low voltage flash EEPROM memory cell with improved data retention | Richard J. McPartland | 2003-12-09 |
| 6653659 | Silicon carbide inversion channel mosfets | Sei-Hyung Ryu, Joseph Sumakeris, Anant Agarwal | 2003-11-25 |
| 6579775 | Semiconductor device having a metal gate with a work function compatible with a semiconductor device | Isik C. Kizilyalli, Lori Stirling | 2003-06-17 |
| 6573128 | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same | — | 2003-06-03 |
| 6573149 | Semiconductor device having a metal gate with a work function compatible with a semiconductor device | Isik C. Kizilyalli, Lori Stirling | 2003-06-03 |
| 6555871 | Flash memory device having a bipolar transistor formed integral thereto and a method of manufacture therefor | Yih-Feng Chyan, Chung Wai Leung | 2003-04-29 |
| 6552931 | Low voltage flash EEPROM memory cell with improved data retention | Richard J. McPartland | 2003-04-22 |
| 6528845 | Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection | Jeffrey D. Bude, Richard J. McPartland | 2003-03-04 |
| 6521496 | Non-volatile memory semiconductor device including a graded, grown, high quality control gate oxide layer and associated methods | Kumar Pradip Roy | 2003-02-18 |
| 6512700 | Non-volatile memory cell having channel initiated secondary electron injection programming mechanism | Richard J. McPartland | 2003-01-28 |
| 6509230 | Non-volatile memory semiconductor device including a graded, grown, high quality oxide layer and associated methods | Kumar Pradip Roy | 2003-01-21 |
| 6459615 | Non-volatile memory cell array with shared erase device | Richard J. McPartland | 2002-10-01 |
| 6429041 | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation | Sei-Hyung Ryu, Joseph Sumakeris, Anant Agarwal | 2002-08-06 |
| 6395610 | Method of making bipolar transistor semiconductor device including graded, grown, high quality oxide layer | Kumar Pradip Roy | 2002-05-28 |
| 6383879 | Semiconductor device having a metal gate with a work function compatible with a semiconductor device | Isik C. Kizilyalli, Lori Stirling | 2002-05-07 |
| 6329675 | Self-aligned bipolar junction silicon carbide transistors | Anant Agarwal, Sei-Hyung Ryu | 2001-12-11 |
| 6324095 | Low voltage flash EEPROM memory cell with improved data retention | Richard J. McPartland | 2001-11-27 |
| 6313500 | Split gate memory cell | Patrick J. Kelley, Chung Wai Leung | 2001-11-06 |
| 6303475 | Methods of fabricating silicon carbide power devices by controlled annealing | Alexander Suvorov, John Williams Palmour | 2001-10-16 |
| 6284598 | Method of manufacturing a flash memory cell having inter-poly-dielectric isolation | Patrick J. Kelley, Larry Bruce Fritzinger, Cynthia C. Lee, John Simon Molloy | 2001-09-04 |
| 6281521 | Silicon carbide horizontal channel buffered gate semiconductor devices | — | 2001-08-28 |
| 6252270 | Increased cycle specification for floating-gate and method of manufacture thereof | Richard W. Gregor, Isik C. Kizilyalli | 2001-06-26 |