Issued Patents All Time
Showing 26–50 of 96 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8685861 | Integrated circuit system with contact distribution film | Chih Ping Yong, Peter Chew, Chuin Boon Yeap, Hoon Lian Yap, Nace Rossi +1 more | 2014-04-01 |
| 8022481 | Robust shallow trench isolation structures and a method for forming shallow trench isolation structures | Arun K. Nanda, Nace Rossi | 2011-09-20 |
| 7982239 | Power switching transistors | Ty R. McNutt, Eric J. Stewart, Rowland C. Clarke, Stephen Van Campen, Marc E. Sherwin | 2011-07-19 |
| 7982286 | Method to improve metal defects in semiconductor device fabrication | Nace Rossi | 2011-07-19 |
| 7923340 | Method to reduce collector resistance of a bipolar transistor and integration into a standard CMOS flow | Alan S. Chen, Mark Dyson, Nace Rossi, Xiaojun Yuan | 2011-04-12 |
| 7906407 | Shallow trench isolation structures and a method for forming shallow trench isolation structures | Nace Rossi, Arun K. Nanda | 2011-03-15 |
| 7898038 | Method to improve writer leakage in SiGe bipolar device | Alan S. Chen, Mark Dyson, Nace Rossi | 2011-03-01 |
| 7880171 | Minimizing degradation of SiC bipolar semiconductor devices | Joseph Sumakeris, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more | 2011-02-01 |
| 7843030 | Method, apparatus, material, and system of using a high gain avalanche photodetector transistor | — | 2010-11-30 |
| 7764541 | Method and apparatus for hot carrier programmed one time programmable (OTP) memory | Ross A. Kohler, Richard J. McPartland | 2010-07-27 |
| 7675179 | Device and method to eliminate shorting induced by via to metal misalignment | Sen Sidhartha, Nace Rossi | 2010-03-09 |
| 7557010 | Method to improve writer leakage in a SiGe bipolar device | Alan S. Chen, Mark Dyson, Nace Rossi | 2009-07-07 |
| 7514336 | Robust shallow trench isolation structures and a method for forming shallow trench isolation structures | Arun K. Nanda, Nace Rossi | 2009-04-07 |
| 7456061 | Method to reduce boron penetration in a SiGe bipolar device | Alan S. Chen, Mark Dyson, Nace Rossi, Xiaojun Yuan | 2008-11-25 |
| 7449762 | Lateral epitaxial GaN metal insulator semiconductor field effect transistor | — | 2008-11-11 |
| 7427326 | Minimizing degradation of SiC bipolar semiconductor devices | Joseph Sumakeris, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more | 2008-09-23 |
| 7279393 | Trench isolation structure and method of manufacture therefor | Arun K. Nanda, Nace Rossi | 2007-10-09 |
| 7235489 | Device and method to eliminate shorting induced by via to metal misalignment | Sen Sidhartha, Nace Rossi | 2007-06-26 |
| 7205629 | Lateral super junction field effect transistor | — | 2007-04-17 |
| 7141486 | Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures | Nace Rossi, Arun K. Nanda | 2006-11-28 |
| 7105875 | Lateral power diodes | — | 2006-09-12 |
| 7026669 | Lateral channel transistor | — | 2006-04-11 |
| 7019344 | Lateral drift vertical metal-insulator semiconductor field effect transistor | — | 2006-03-28 |
| 7002829 | Apparatus and method for programming a one-time programmable memory device | Richard J. McPartland, Ross A. Kohler | 2006-02-21 |
| 6956238 | SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL | Sei-Hyung Ryu, Anant Agarwal, Mrinal K. Das, Lori A. Lipkin, John Williams Palmour | 2005-10-18 |