Issued Patents All Time
Showing 26–50 of 85 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9570560 | Diffused junction termination structures for silicon carbide devices | Anant Agarwal, Tangali S. Sudarshan, Alexander Viktorovich Bolotnikov | 2017-02-14 |
| 9552997 | Silicon carbide switching devices including P-type channels | Mrinal K. Das, Sei-Hyung Ryu | 2017-01-24 |
| 9548374 | High power insulated gate bipolar transistors | Sei-Hyung Ryu, Charlotte Jonas, Anant Agarwal | 2017-01-17 |
| 9530844 | Transistor structures having reduced electrical field at the gate oxide and methods for making same | Brett Hull | 2016-12-27 |
| 9478537 | High-gain wide bandgap darlington transistors and related methods of fabrication | Anant Agarwal | 2016-10-25 |
| 9466674 | Semiconductor devices with non-implanted barrier regions and methods of fabricating same | Scott Allen | 2016-10-11 |
| 9431525 | IGBT with bidirectional conduction | Sei-Hyung Ryu | 2016-08-30 |
| 9385182 | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same | Jason Henning, Sei-Hyung Ryu | 2016-07-05 |
| 9337268 | SiC devices with high blocking voltage terminated by a negative bevel | Craig Capell, Anant Agarwal, Sei-Hyung Ryu | 2016-05-10 |
| 9318623 | Recessed termination structures and methods of fabricating electronic devices including recessed termination structures | Jason Henning | 2016-04-19 |
| 9318624 | Schottky structure employing central implants between junction barrier elements | — | 2016-04-19 |
| 9312343 | Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials | Sei-Hyung Ryu, Anant Agarwal, Sarit Dhar | 2016-04-12 |
| 9231122 | Schottky diode | Jason Henning, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2016-01-05 |
| 9171977 | Optically assist-triggered wide bandgap thyristors having positive temperature coefficients | — | 2015-10-27 |
| 9117739 | Semiconductor devices with heterojunction barrier regions and methods of fabricating same | — | 2015-08-25 |
| 9064710 | Transistor with A-face conductive channel and trench protecting well region | Anant Agarwal, Charlotte Jonas | 2015-06-23 |
| 9064840 | Insulated gate bipolar transistors including current suppressing layers | — | 2015-06-23 |
| 9059197 | Electronic device structure with a semiconductor ledge layer for surface passivation | Anant Agarwal | 2015-06-16 |
| 8952481 | Super surge diodes | Jennifer Duc | 2015-02-10 |
| 8866150 | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts | Mrinal K. Das, John M. Clayton, Jr., Matthew Donofrio | 2014-10-21 |
| 8835987 | Insulated gate bipolar transistors including current suppressing layers | — | 2014-09-16 |
| 8809904 | Electronic device structure with a semiconductor ledge layer for surface passivation | Anant Agarwal | 2014-08-19 |
| 8803277 | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same | Jason Henning, Sei-Hyung Ryu | 2014-08-12 |
| 8710510 | High power insulated gate bipolar transistors | Sei-Hyung Ryu, Charlotte Jonas, Anant Agarwal | 2014-04-29 |
| 8680587 | Schottky diode | Jason Henning, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2014-03-25 |