Issued Patents All Time
Showing 51–75 of 85 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8664665 | Schottky diode employing recesses for elements of junction barrier array | Jason Henning, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2014-03-04 |
| 8653534 | Junction Barrier Schottky diodes with current surge capability | Sei-Hyung Ryu | 2014-02-18 |
| 8637386 | Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same | Anant Agarwal, Tangali S. Sudarshan, Alexander Viktorovich Bolotnikov | 2014-01-28 |
| 8629509 | High voltage insulated gate bipolar transistors with minority carrier diverter | Sei-Hyung Ryu | 2014-01-14 |
| 8618582 | Edge termination structure employing recesses for edge termination elements | Jason Henning, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen | 2013-12-31 |
| 8610130 | Monolithic high voltage switching devices | Sei-Hyung Ryu | 2013-12-17 |
| 8563986 | Power semiconductor devices having selectively doped JFET regions and related methods of forming such devices | — | 2013-10-22 |
| 8552435 | Electronic device structure including a buffer layer on a base layer | Anant Agarwal | 2013-10-08 |
| 8541787 | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability | — | 2013-09-24 |
| 8536582 | Stable power devices on low-angle off-cut silicon carbide crystals | Anant Agarwal, Doyle Craig Capell, Albert Augustus Burk, Jr., Joseph Sumakeris, Michael O'Loughlin | 2013-09-17 |
| 8497552 | Semiconductor devices with current shifting regions and related methods | Anant Agarwal | 2013-07-30 |
| 8460977 | Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures | Anant Agarwal | 2013-06-11 |
| 8432012 | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same | Jason Henning | 2013-04-30 |
| 8415671 | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices | — | 2013-04-09 |
| 8384181 | Schottky diode structure with silicon mesa and junction barrier Schottky wells | Sei-Hyung Ryu | 2013-02-26 |
| 8354690 | Solid-state pinch off thyristor circuits | Robert J. Callanan, Sei-Hyung Ryu | 2013-01-15 |
| 8330244 | Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same | Sei-Hyung Ryu, Anant Agarwal | 2012-12-11 |
| 8304783 | Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same | Saptharishi Sriram | 2012-11-06 |
| 8294507 | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits | James Richmond, Robert J. Callanan | 2012-10-23 |
| 8288220 | Methods of forming semiconductor devices including epitaxial layers and related structures | Brett Hull | 2012-10-16 |
| 8232558 | Junction barrier Schottky diodes with current surge capability | Sei-Hyung Ryu | 2012-07-31 |
| 8211770 | Transistor with A-face conductive channel and trench protecting well region | Anant Agarwal, Charlotte Jonas | 2012-07-03 |
| 8193848 | Power switching devices having controllable surge current capabilities | James Richmond, Anant Agarwal, Sei-Hyung Ryu | 2012-06-05 |
| 8097919 | Mesa termination structures for power semiconductor devices including mesa step buffers | Anant Agarwal | 2012-01-17 |
| 7989882 | Transistor with A-face conductive channel and trench protecting well region | Anant Agarwal, Charlotte Jonas | 2011-08-02 |