Issued Patents All Time
Showing 26–50 of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5720826 | Photovoltaic element and fabrication process thereof | Ryo Hayashi, Shotaro Okabe, Masahiro Kanai, Jinsho Matsuyama, Akira Sakai +3 more | 1998-02-24 |
| 5714010 | Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same | Jinsho Matsuyama, Toshimitsu Kariya, Tetsuya Takei, Katsumi Nakagawa, Masahiro Kanai +1 more | 1998-02-03 |
| 5589007 | Photovoltaic elements and process and apparatus for their formation | Shotaro Okabe, Masahiro Kanai, Hideo Tamura, Atsushi Yasuno, Akira Sakai +1 more | 1996-12-31 |
| 5575855 | Apparatus for forming a deposited film | Masahiro Kanai, Takehito Yoshino, Tadashi Hori | 1996-11-19 |
| 5573601 | Pin amorphous silicon photovoltaic element with counter-doped intermediate layer | Keishi Saitoh, Tatsuyuki Aoike, Masafumi Sano, Mitsuyuki Niwa | 1996-11-12 |
| 5527391 | Method and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD method | Hiroshi Echizen, Katsumi Nakagawa, Masahiro Kanai, Toshimitsu Kariya, Jinsho Matsuyama +1 more | 1996-06-18 |
| 5520740 | Process for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the same | Masahiro Kanai, Jinsho Matsuyama, Katsumi Nakagawa, Toshimitsu Kariya, Tetsuya Takei +1 more | 1996-05-28 |
| 5510151 | Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space | Jinsho Matsuyama, Toshimitsu Kariya, Tetsuya Takei, Katsumi Nakagawa, Masahiro Kanai +1 more | 1996-04-23 |
| 5468521 | Method for forming a photoelectric deposited film | Masahiro Kanai, Takehito Yoshino, Tadashi Hori | 1995-11-21 |
| 5382531 | Method for continuously manufacturing a semiconductor device | Takashi Kurokawa, Masahiro Kanai, Masafumi Sano, Takehito Yoshino, Yuzo Kohda | 1995-01-17 |
| 5291484 | Relay and exchange system for time division multiplex data | Yoshihiro Tomita, Tatsuo Fujiwara, Hirotoshi Shimizu, Masashi Matsumoto | 1994-03-01 |
| 5284525 | Solar cell | Keishi Saito, Tatsuyuki Aoike, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Kohda | 1994-02-08 |
| 5266116 | Glow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollers | Takashi Kurokawa, Masahiro Kanai, Masafumi Sano, Takehito Yoshino, Yuzo Kohda | 1993-11-30 |
| 5244509 | Substrate having an uneven surface for solar cell and a solar cell provided with said substrate | Kozo Arao, Mitsuyuki Niwa, Eiji Takeuchi | 1993-09-14 |
| 5130170 | Microwave PCVD method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation | Masahiro Kanai, Jinsho Matsuyama, Katsumi Nakagawa, Toshimitsu Kariya, Tetsuya Takei +1 more | 1992-07-14 |
| 5114770 | Method for continuously forming functional deposited films with a large area by a microwave plasma CVD method | Hiroshi Echizen, Katsumi Nakagawa, Masahiro Kanai, Toshimitsu Kariya, Jinsho Matsuyama +1 more | 1992-05-19 |
| 5093704 | Semiconductor device having a semiconductor region in which a band gap being continuously graded | Keishi Saito | 1992-03-03 |
| 5028488 | Functional ZnSe.sub.1-x Te.sub.x :H deposited film | Katsumi Nakagawa, Shunichi Ishihara, Masahiro Kanai, Tsutomu Murakami, Kozo Arao | 1991-07-02 |
| 5008726 | PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Shunichi Ishihara, Masahiro Kanai, Tsutomu Murakami, Kozo Arao +1 more | 1991-04-16 |
| 4959106 | Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Masahiro Kanai, Shunichi Ishihara, Kozo Arao, Akira Sakai +1 more | 1990-09-25 |
| 4940642 | Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer | Shigeru Shirai, Keishi Saito, Takayoshi Arai, Minoru Kato | 1990-07-10 |
| 4926229 | Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material | Katsumi Nakagawa, Shunichi Ishihara, Masahiro Kanai, Kozo Arao, Akira Sakai | 1990-05-15 |
| 4888062 | Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % | Katsumi Nakagawa, Masahiro Kanai, Shunichi Ishihara, Kozo Arao, Akira Sakai +1 more | 1989-12-19 |
| 4887134 | Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded | Keishi Saito | 1989-12-12 |
| 4851302 | Functional ZnSe:H deposited films | Katsumi Nakagawa, Shunichi Ishihara, Kozo Arao, Akira Sakai, Masahiro Kanai | 1989-07-25 |