Issued Patents All Time
Showing 26–41 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8450119 | Magnetic tunnel junction patterning using Ta/TaN as hard mask | Chyu-Jiuh Torng, Terry Kin Ting Ko | 2013-05-28 |
| 8273666 | Process to fabricate bottom electrode for MRAM device | Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong +4 more | 2012-09-25 |
| 7867896 | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor | Hua Chung, Vincent Ku, Ling Chen | 2011-01-11 |
| 7838436 | Bottom electrode for MRAM device and method to fabricate it | Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong +4 more | 2010-11-23 |
| 7576002 | Multi-step barrier deposition method | Ling Chen, Seshadri Ganguli, Christophe Marcadal | 2009-08-18 |
| 7514358 | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor | Hua Chung, Vincent Ku, Ling Chen | 2009-04-07 |
| 7358100 | Bottom conductor for integrated MRAM | Chyu-Jiuh Torng, Cheng T. Horng, Ruying Tong, Chen-Jung Chien, Liubo Hong | 2008-04-15 |
| 7265404 | Bottom conductor for integrated MRAM | Chyu-Jiuh Torng, Cheng T. Horng, Ruying Tong, Chen-Jung Chien, Liubo Hong | 2007-09-04 |
| 7122386 | Method of fabricating contact pad for magnetic random access memory | Chyu-Jiuh Torng, Tom Zhong, Po-Kang Wang | 2006-10-17 |
| 6972267 | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor | Hua Chung, Vincent Ku, Ling Chen | 2005-12-06 |
| 6953742 | Tantalum barrier layer for copper metallization | Ling Chen, Seshadri Ganguli, Christophe Marcadal | 2005-10-11 |
| 6811814 | Method for growing thin films by catalytic enhancement | Ling Chen | 2004-11-02 |
| 6730420 | Magnetic thin film recording media having extremely low noise and high thermal stability | Gerardo A. Bertero, Tu Chen, Charles Chen | 2004-05-04 |
| 6660622 | Process for removing an underlying layer and depositing a barrier layer in one reactor | Ling Chen, Seshadri Ganguli, Christophe Marcadal | 2003-12-09 |
| 6607976 | Copper interconnect barrier layer structure and formation method | Ling Chen, Seshadri Ganguli, Christophe Marcadal, Roderick C. Mosely, Mei Chang | 2003-08-19 |
| 6498091 | Method of using a barrier sputter reactor to remove an underlying barrier layer | Ling Chen, Seshadri Ganguli, Christophe Marcadal | 2002-12-24 |