Issued Patents All Time
Showing 76–92 of 92 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5874328 | Reverse CMOS method for dual isolation semiconductor device | Kuang-Yeh Chang | 1999-02-23 |
| 5864158 | Trench-gated vertical CMOS device | Donald L. Wollesen | 1999-01-26 |
| 5838044 | Integrated circuit having improved polysilicon resistor structures | Kuang-Yeh Chang | 1998-11-17 |
| 5821146 | Method of fabricating FET or CMOS transistors using MeV implantation | Kuang-Yeh Chang, Mark I. Gardner, Fred N. Hause | 1998-10-13 |
| 5777370 | Trench isolation of field effect transistors | Farrokh Omid-Zohoor, Andre Stolmeijer, Craig S. Sander | 1998-07-07 |
| 5739063 | High temperature local oxidation of silicon for fine line patterns | Yu Sun | 1998-04-14 |
| 5734179 | SRAM cell having single layer polysilicon thin film transistors | Kuang-Yeh Chang | 1998-03-31 |
| 5712173 | Method of making semiconductor device with self-aligned insulator | Feng Qian, Tze-Kwai Kelvin Lai | 1998-01-27 |
| 5693568 | Reverse damascene via structures | Kuang-Yeh Chang | 1997-12-02 |
| 5672524 | Three-dimensional complementary field effect transistor process | Yu Sun | 1997-09-30 |
| 5646063 | Hybrid of local oxidation of silicon isolation and trench isolation for a semiconductor device | Sunil Mehta | 1997-07-08 |
| 5612249 | Post-gate LOCOS | Yu Sun | 1997-03-18 |
| 5610088 | Method of fabricating field effect transistors having lightly doped drain regions | Kuang-Yeh Chang | 1997-03-11 |
| 5608253 | Advanced transistor structures with optimum short channel controls for high density/high performance integrated circuits | Kuang-Yeh Chang | 1997-03-04 |
| 5554562 | Advanced isolation scheme for deep submicron technology | Kuang-Yeh Chang, Mark I. Gardner, Frederick N. Hause | 1996-09-10 |
| 5489540 | Method of making simplified LDD and source/drain formation in advanced CMOS integrated circuits using implantation through well mask | Kuang-Yeh Chang | 1996-02-06 |
| 5091324 | Process for producing optimum intrinsic, long channel, and short channel MOS devices in VLSI structures | James Hsu | 1992-02-25 |