DS

Daniel Sobek

AM AMD: 21 patents #507 of 9,279Top 6%
HI Hi: 14 patents #13 of 77Top 20%
AT Agilent Technologies: 8 patents #238 of 3,411Top 7%
1E 1S1 Energy: 5 patents #1 of 2Top 50%
SL Spansion Llc.: 1 patents #435 of 769Top 60%
📍 Portola Valley, CA: #39 of 621 inventorsTop 7%
🗺 California: #7,415 of 386,348 inventorsTop 2%
Overall (All Time): #50,643 of 4,157,543Top 2%
52
Patents All Time

Issued Patents All Time

Showing 26–50 of 52 patents

Patent #TitleCo-InventorsDate
7138062 Mobile phase gradient generation microfluidic device Hongfeng Yin, Kevin Killeen 2006-11-21
7125763 Silicided buried bitline process for a non-volatile memory cell Timothy Thurgate, Mark Randolph 2006-10-24
7060975 Electrospray devices for mass spectrometry Karen L. Seaward, Hongfeng Yin, Kevin Killeen, Daniel Roitman 2006-06-13
7022982 Ion source frequency feedback device and method Jing Cai, Kevin Killeen, Hongfeng Yin 2006-04-04
6958119 Mobile phase gradient generation microfluidic device Hongfeng Yin, Kevin Killeen 2005-10-25
6935192 Microfluidic bulk flow determinations based on converting heat tracer measurements Hongfeng Yin, Roy D. Rocklin, Kevin Killeen 2005-08-30
6549466 Using a negative gate erase voltage applied in steps of decreasing amounts to reduce erase time for a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure Narbeh Derhacobian, Michael A. Van Buskirk, Chi Chang 2003-04-15
6519182 Using hot carrier injection to control over-programming in a non-volatile memory cell having an oxide-nitride-oxide (ONO) structure Narbeh Derhacobian 2003-02-11
6518072 Deposited screen oxide for reducing gate edge lifting Carl Robert Huster, Timothy Thurgate, Sameer Haddad 2003-02-11
6456536 Method of programming a non-volatile memory cell using a substrate bias Timothy Thurgate, Janet Wang, Narbeh Derhacobian 2002-09-24
6410956 Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices Vei-Han Chan, Scott Luning, Mark Randolph, Nicholas H. Tripsas, Janet Wang +2 more 2002-06-25
6381179 Using a negative gate erase to increase the cycling endurance of a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure Narbeh Derhacobian, Michael Van Buskirk, Chi Chang 2002-04-30
6366501 Selective erasure of a non-volatile memory cell of a flash memory device Timothy Thurgate 2002-04-02
6356482 Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structure Narbeh Derhacobian, Michael Van Buskirk, Chi Chang 2002-03-12
6337246 Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing Timothy Thurgate, Carl Robert Huster, Tuan Pham, Mark T. Ramsbey, Sameer Haddad 2002-01-08
6331953 Intelligent ramped gate and ramped drain erasure for non-volatile memory cells Janet Wang, Narbeh Derhacobian 2001-12-18
6329687 Two bit flash cell with two floating gate regions Timothy Thurgate, Carl Robert Huster, Masaaki Higashitani 2001-12-11
6329257 Method for laterally peaked source doping profiles for better erase control in flash memory devices Scott Luning, Timothy Thurgate 2001-12-11
6294430 Nitridization of the pre-ddi screen oxide Richard Fastow, Sameer Haddad 2001-09-25
6268624 Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing Timothy Thurgate, Carl Robert Huster, Tuan Pham, Mark T. Ramsbey, Sameer Haddad 2001-07-31
6269023 Method of programming a non-volatile memory cell using a current limiter Narbeh Derhacobian, Janet Wang, Sameer Haddad 2001-07-31
6255165 Nitride plug to reduce gate edge lifting Timothy Thurgate, Carl Robert Huster 2001-07-03
6251717 Viable memory cell formed using rapid thermal annealing Mark T. Ramsbey, Nicholas H. Trispas 2001-06-26
6236596 Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devices Timothy Thurgate, Scott Luning, Vei-Han Chan, Sameer Haddad 2001-05-22
6153487 Approach for the formation of semiconductor devices which reduces band-to-band tunneling current and short-channel effects Scott Luning, Timothy Thurgate, Nicholas H. Tripsas 2000-11-28