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3D 1T1C stacked dram structure and method to fabricate |
Sean T. Ma, Abhishek A. Sharma |
2025-06-10 |
| 12288807 |
Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly |
Rishabh Mehandru, Willy Rachmady, Harold W. Kennel, Tahir Ghani |
2025-04-29 |
| 12288813 |
Gate-all-around integrated circuit structures having insulator fin on insulator substrate |
Rishabh Mehandru, Cory E. Weber, Willy Rachmady, Varun MISHRA |
2025-04-29 |
| 12288810 |
Backside contact structures and fabrication for metal on both sides of devices |
Patrick Morrow, Rishabh Mehandru, Kimin Jun |
2025-04-29 |
| 12255137 |
Sideways vias in isolation areas to contact interior layers in stacked devices |
Ehren Mannebach, Hui Jae Yoo, Patrick Morrow, Anh Phan, Willy Rachmady +3 more |
2025-03-18 |
| 12224202 |
Forming an oxide volume within a fin |
Cheng-Ying Huang, Gilbert Dewey, Jack T. Kavalieros, Ehren Mannebach, Patrick Morrow +3 more |
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| 12199098 |
Fin doping and integrated circuit structures resulting therefrom |
Cory E. Weber, Stephen M. Cea, Leonard C. Pipes, Seahee Hwangbo, Rishabh Mehandru +3 more |
2025-01-14 |