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Device, method and system to provide a stressed channel of a transistor |
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Gate-all-around integrated circuit structures having high mobility |
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Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
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| 12294006 |
Gate-all-around integrated circuit structures having insulator substrate |
Chung-Hsun Lin, Biswajeet Guha, William Hsu, Tahir Ghani |
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| 12243875 |
Forksheet transistors with dielectric or conductive spine |
Seung Hoon Sung, Cheng-Ying Huang, Marko Radosavljevic, Christopher M. Neumann, Susmita Ghose +4 more |
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| 12199098 |
Fin doping and integrated circuit structures resulting therefrom |
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Neighboring gate-all-around integrated circuit structures having conductive contact stressor between epitaxial source or drain regions |
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