Issued Patents 2024
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12178147 | Semiconductor device and method for manufacturing the same | Hai-Dang Trinh, Fa-Shen Jiang, Chii-Ming Wu | 2024-12-24 |
| 12161057 | Method for forming semiconductor structure | Fu-Ting Sung, Ching Ju Yang, Chii-Ming Wu | 2024-12-03 |
| 12137572 | Ferroelectric memory device and method of manufacturing the same | Yi Yang Wei, Tzu-Yu Lin, Bi-Shen Lee, Hai-Dang Trinh, Hsun-Chung Kuang | 2024-11-05 |
| 12114582 | Top-electrode barrier layer for RRAM | Chii-Ming Wu, Fa-Shen Jiang | 2024-10-08 |
| 12069867 | Ferroelectric random access memory device with seed layer | Bi-Shen Lee, Hsun-Chung Kuang, Yi Yang Wei | 2024-08-20 |
| 12069971 | Switching layer scheme to enhance RRAM performance | Hai-Dang Trinh, Cheng-Yuan Tsai, Wen-Ting Chu | 2024-08-20 |
| 12021113 | Amorphous bottom electrode structure for MIM capacitors | Jui-Lin Chu, Cheng-Yuan Tsai | 2024-06-25 |
| 11991937 | Semiconductor device and method for manufacturing the same | Hai-Dang Trinh, Fa-Shen Jiang | 2024-05-21 |
| 11963468 | Rram structure | Hai-Dang Trinh, Chii-Ming Wu, Fa-Shen Jiang | 2024-04-16 |
| 11916127 | Multi-layer electrode to improve performance of ferroelectric memory device | Yi Yang Wei, Bi-Shen Lee, Hsin-Yu Lai, Hai-Dang Trinh, Hsun-Chung Kuang | 2024-02-27 |
| 11895933 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hai-Dang Trinh, Hsun-Chung Kuang, Bi-Shen Lee | 2024-02-06 |
| 11887929 | Techniques to inhibit delamination from flowable gap-fill dielectric | Chin-Wei Liang, Hsun-Chung Kuang, Ching Ju Yang | 2024-01-30 |