Issued Patents 2024
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12178147 | Semiconductor device and method for manufacturing the same | Fa-Shen Jiang, Hsing-Lien Lin, Chii-Ming Wu | 2024-12-24 |
| 12160995 | Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer | Bi-Shen Lee, Tzu-Yu Lin, Yi Yang Wei, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-12-03 |
| 12137572 | Ferroelectric memory device and method of manufacturing the same | Yi Yang Wei, Tzu-Yu Lin, Bi-Shen Lee, Hsing-Lien Lin, Hsun-Chung Kuang | 2024-11-05 |
| 12132066 | Capping structure along image sensor element to mitigate damage to active layer | Chun-Kai Lan, Hsun-Chung Kuang | 2024-10-29 |
| 12127483 | Doped sidewall spacer/etch stop layer for memory | Bi-Shen Lee, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-10-22 |
| 12102019 | Data storage structure for improving memory cell reliability | Chii-Ming Wu, Cheng-Yuan Tsai, Tzu-Chung Tsai, Fa-Shen Jiang | 2024-09-24 |
| 12080738 | Image sensor having stacked metal oxide films as fixed charge film | Chih-Yu Lai, Min-Ying Tsai, Yeur-Luen Tu, Cheng-Yuan Tsai | 2024-09-03 |
| 12075626 | Memory window of MFM MOSFET for small cell size | Yi Yang Wei, Bi-Shen Lee, Fa-Shen Jiang, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-08-27 |
| 12075636 | Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang | 2024-08-27 |
| 12069971 | Switching layer scheme to enhance RRAM performance | Cheng-Yuan Tsai, Hsing-Lien Lin, Wen-Ting Chu | 2024-08-20 |
| 12035537 | Interface film to mitigate size effect of memory device | Bi-Shen Lee, Yi Yang Wei, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-07-09 |
| 11991937 | Semiconductor device and method for manufacturing the same | Hsing-Lien Lin, Fa-Shen Jiang | 2024-05-21 |
| 11967611 | Multilayer structure, capacitor structure and electronic device | Yi Yang Wei, Fa-Shen Jiang, Bi-Shen Lee, Hsun-Chung Kuang | 2024-04-23 |
| 11961545 | Circuit design and layout with high embedded memory density | Fa-Shen Jiang, Hsia-Wei Chen, Hsun-Chung Kuang, Cheng-Yuan Tsai | 2024-04-16 |
| 11963468 | Rram structure | Chii-Ming Wu, Hsing-Lien Lin, Fa-Shen Jiang | 2024-04-16 |
| 11916127 | Multi-layer electrode to improve performance of ferroelectric memory device | Yi Yang Wei, Bi-Shen Lee, Hsin-Yu Lai, Hsing-Lien Lin, Hsun-Chung Kuang | 2024-02-27 |
| 11895933 | Resistive memory cell with switching layer comprising one or more dopants | Fa-Shen Jiang, Cheng-Yuan Tsai, Hsing-Lien Lin, Hsun-Chung Kuang, Bi-Shen Lee | 2024-02-06 |